Inorganic metal oxide ion storage layer, processing method and application of low-temperature solution of inorganic metal oxide ion storage layer

A technology of inorganic metals and oxide layers, applied in the fields of instruments, nonlinear optics, optics, etc., can solve problems such as complex processing procedures, affecting adhesion ability, and limiting use

Active Publication Date: 2018-07-13
SHENZHEN GUANGYI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, sol-gel technology often requires high-temperature heat treatment, which increases energy consumption and limits the use of this method, and high-temperature conditions often cause cracks in the ion storage layer, affecting its adhesion.
[0003] Existing methods for processing inorganic metal oxide ion storage layers require complex processing procedures or high-temperature post-treatment methods

Method used

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  • Inorganic metal oxide ion storage layer, processing method and application of low-temperature solution of inorganic metal oxide ion storage layer
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  • Inorganic metal oxide ion storage layer, processing method and application of low-temperature solution of inorganic metal oxide ion storage layer

Examples

Experimental program
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Effect test

Embodiment 1

[0056] TiO 2 Preparation of the ion storage layer

[0057] Add 2 ml of isopropanol solution in the vial, then add 0.66 ml of Ti(OCH(CH 3 ) 2 ) 4 . Sonicate for 10 minutes in an ultrasonic sample disruptor and add 100 microliters of acetic acid as a ligand. The prepared solution can be directly processed into TiO on the surface of indium tin oxide by solution spin coating at a speed of 1000rpm. 2 film. The film was heat-treated in an oven at 100°C for ten minutes to remove the isopropanol solvent.

[0058] figure 1 It is the cyclic voltammogram of the titanium oxide ion storage layer in Example 1. It can be seen from the figure that the prepared titanium oxide film has high ion storage capacity and good electrochemical reversibility.

Embodiment 2

[0060] MoO 3 Preparation of the ion storage layer

[0061] Add 2 mL of isopropanol solution to the vial, followed by 100 µL of acetic acid and 0.66 mL of MoCl 3 . Sonicate for 10 minutes in an ultrasonic sample disruptor. The prepared solution can be directly processed into MoO on the surface of indium tin oxide by solution spin coating method at a speed of 1000rpm 3 film. The film was heat-treated in an oven at 120°C for ten minutes to remove the isopropanol solvent.

[0062] figure 2 It is the cyclic voltammogram of the molybdenum oxide ion storage layer in Example 2. It can be seen from the figure that the prepared molybdenum oxide thin film has high ion storage capacity and good electrochemical reversibility.

Embodiment 3

[0064] TiO 2 Doped MoO 3 Preparation of the ion storage layer

[0065] Add 2 mL of isopropanol solution and 10 μL of acetic acid to the vial, followed by 0.66 mL of MoCl 3 . Ti(OCH(CH 3 ) 2 ) 4 Adding it to the MoCl3 solution in a certain proportion can prepare TiO 2 Doped MoO 3 solution. For example, the molar ratio Mo:Ti=2:1, the molar ratio Mo:Ti=3:1, and the molar ratio Mo:Ti=10:1. The prepared solution can be directly processed into TiO on the surface of indium tin oxide by using the solution spin coating method at a speed of 1000rpm. 2 Doped MoO 3 film. The film was heat-treated in an oven at 120°C for ten minutes to remove the isopropanol solvent.

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Abstract

The invention discloses an inorganic metal oxide ion storage layer, a processing method and application of a low-temperature solution of the inorganic metal oxide ion storage layer, and belongs to thetechnical field of inorganic material preparation. The processing method of the solution of an inorganic metal oxide layer comprises the following steps that (1) precursor salt of the inorganic metaloxide, polar solvent and ligand are mixed to obtain a precursor solution; (2) film is formed by adopting the precursor solution, heat treatment is conducted, and the inorganic metal oxide layer is obtained after the polar solvent is volatilized. According to the inorganic metal oxide ion storage layer, the processing method and application of the low-temperature solution of the inorganic metal oxide ion storage layer, under the condition that the concentration and components of the precursor are regulated, after low-temperature post-treatment, obtained metal thin film has high stability and high ion storage capacity. The method does not need complex high-temperature vacuum environment, only needs to use the precursor of different oxides, and the metal oxide thin film with an excellent property of different types prepared at a lower temperature can be taken as the ion storage layer.

Description

technical field [0001] The invention belongs to the technical field of inorganic material preparation, and relates to an inorganic metal oxide layer, its preparation method and application, in particular to an inorganic metal oxide ion storage layer, its low-temperature solution processing method and its application in electrochromic devices . Background technique [0002] Electrochromic devices have shown broad application prospects in flexible displays, smart windows, data storage, and other fields. Generally, an electrochromic device is composed of five layers, namely, a transparent conductive layer (ITO), an electrochromic layer, an electrolyte layer, an ion storage layer, and a transparent conductive layer (ITO). The main function of the ion storage layer is to balance the ions shuttled between the electrolyte layer and the electrochromic layer. In an electrochromic device, the ion storage layer is crucial. In most of the reported studies, the inorganic ion storage l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/15
CPCG02F1/1525
Inventor 何嘉智游利焱
Owner SHENZHEN GUANGYI TECH CO LTD
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