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85 results about "Oxide ion" patented technology

Answer Wiki. An oxide ion is a negatively charged oxygen atom. This means it has gained two electrons from another atom. Thus, it is represented as O2- (2- is super scripted). It is also an anion, which is a negatively charged ion.

Inductively coupled plasma mass spectrometry used for determining trace aluminum molybdenum vanadium titanium niobium in silicon steel

InactiveCN104614434AOvercoming distractionsOvercome the shortcoming that the detection limit cannot reach the product control standardMaterial analysis by electric/magnetic meansNiobiumDecomposition
The invention discloses an inductively coupled plasma mass spectrometry used for determining trace aluminum molybdenum vanadium titanium niobium in silicon steel, and simultaneous determination of trace aluminum, molybdenum, vanadium, titanium, and niobium in silicon steel via inductively coupled plasma mass spectrometry (ICP-MS) is discussed. Determination parameters are optimized via condition experiments, and it is determined that RF power is 1400W, pump speed is 30rpm, sampling depth is 140, and atomization pressure is 0.90. Sample decomposition is realized using nitric acid, Be and Y mixed inner standard method is used for correcting signal drift caused by high matrix in measuring processes. Isotope 27Al, 98Mo, 51V, 47Ti, and 93Nb are taken as measuring isotopes based on mass spectrum interference conditions in determination; and at the same time, yield of double charged ions and oxide ions is adjusted to be lowest by adjusting instrument parameters so as to reduce influences. Calibration solutions are prepared via matrix matching, working curve is established via standard addition method, and reagent blank is deducted. Determination lower limit of the elements reaches 1<mu>g/g, and element RSD is less than 5.2% when the inductively coupled plasma mass spectrometry is used for determining silicon steel standard samples.
Owner:QINGDAO TIANHENG MACHINERY

Rare earth metal-based permanent magnet having corrosion-resistant film and method for producing the same

The chemical conversion film containing, at least as the constituent components thereof, (a) at least one of the metals selected from molybdenum, zirconium, vanadium, and tungsten; (b) a rare earth metal constituting the magnet; and (c) oxygen, which is formed on the surface of a rare earth metal-based permanent magnet according to the present invention, contains a composite metal oxide provided on the surface of the R-rich phase having a lower oxidation-reduction potential through a preferential reaction of the metallic ions that are present in the form of complex ions or oxide ions, such as of molybdenum, contained in the treatment solution, with the rare earth metals that elute from the magnet. Thus formed composite metal oxide reduces the difference in corrosion potential as to realize a uniform surface potential, and effectively suppresses the corrosion based on potential difference. Furthermore, the chemical conversion film thus formed exhibits excellent corrosion resistance even if it is provided as a thin film. The production method thereof can be implemented at low cost and by a simple process comprising treating the surface of the magnet by using a treatment solution containing a molybdate and the like.
Owner:HITACHI METALS LTD

Device and method for adjusting oxygen concentration in liquid lead-bismuth alloy by using solid lead oxide

InactiveCN103499983ANot generatedOxygen ion exchange efficiency is highRatio controlLead bismuthLead oxide
The invention discloses a device and a method for adjusting oxygen concentration in a liquid lead-bismuth alloy by using a solid lead oxide, and belongs to the technical field of nuclear engineering. The device comprises a solid oxide ion exchanger bypass, a solid oxide ion exchanger mounting hole, a liquid lead-bismuth alloy inlet, a liquid lead-bismuth alloy outlet, a bypass heat exchanger and a solid oxide ion exchanger, wherein the solid oxide ion exchanger mounting hole is formed in the solid oxide ion exchanger bypass; the liquid lead-bismuth alloy inlet is formed in the solid oxide ion exchanger bypass; the liquid lead-bismuth alloy outlet is formed in the solid oxide ion exchanger bypass; the bypass heat exchanger is wound on the outer wall of the solid oxide ion exchanger bypass; the solid oxide ion exchanger is arranged in the solid oxide ion exchanger bypass. The method comprises the following steps: arranging the solid oxide ion exchanger and the solid oxide ion exchanger bypass respectively; adjusting the oxygen concentration of the liquid lead-bismuth alloy by adjusting the cooling power of the bypass heat exchanger. According to the device and the method, the oxygen content in the liquid lead-bismuth alloy is adjusted by controlling the solid lead oxide, so that the defects existing in the prior art are overcome.
Owner:NORTH CHINA ELECTRIC POWER UNIV (BAODING)

Inorganic metal oxide ion storage layer, processing method and application of low-temperature solution of inorganic metal oxide ion storage layer

ActiveCN108279540AReduce manufacturing costExcellent ion storage layer capacityNon-linear opticsSolventInorganic materials
The invention discloses an inorganic metal oxide ion storage layer, a processing method and application of a low-temperature solution of the inorganic metal oxide ion storage layer, and belongs to thetechnical field of inorganic material preparation. The processing method of the solution of an inorganic metal oxide layer comprises the following steps that (1) precursor salt of the inorganic metaloxide, polar solvent and ligand are mixed to obtain a precursor solution; (2) film is formed by adopting the precursor solution, heat treatment is conducted, and the inorganic metal oxide layer is obtained after the polar solvent is volatilized. According to the inorganic metal oxide ion storage layer, the processing method and application of the low-temperature solution of the inorganic metal oxide ion storage layer, under the condition that the concentration and components of the precursor are regulated, after low-temperature post-treatment, obtained metal thin film has high stability and high ion storage capacity. The method does not need complex high-temperature vacuum environment, only needs to use the precursor of different oxides, and the metal oxide thin film with an excellent property of different types prepared at a lower temperature can be taken as the ion storage layer.
Owner:SHENZHEN GUANGYI TECH CO LTD
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