Semiconductor structure and forming method thereof

Abstract

A semiconductor structure and a forming method thereof are provided. The forming method comprises: providing a substrate, wherein the surface of the substrate is partially provided with a gate; a doping area is arranged in the substrate on one side of the gate, and the surface of the substrate is also provided with a dielectric layer that covers the top of the doping area, the top of the gate andthe sidewall of the gate; forming a trench in the dielectric layer, wherein the trench is exposed from the top of the doping area; forming through holes in the dielectric layer, wherein the through holes are exposed from the top of the gate; forming a first conductive doping layer that fills the trench, wherein the first conductive doping layer is in ohmic contact with the doping area; forming a second conductive doping layer that fills the through holes, wherein the second conductive doping layer is in ohmic contact with the gate. The semiconductor structure and the forming method thereof have the advantages that contact resistance of top surface of the doping area can be reduced, contact resistance of the top surface of the gate can be decreased, heat loss can be reduced, the performanceof the semiconductor structure can be improved, and transmission rate of the semiconductor structure is increased.

Description

Technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a method of forming the same. Background technique [0002] An image sensor is a device that converts optical images into electronic signals. It is widely used in electronic optical devices such as digital cameras. According to different digital data transmission methods, image sensors can be divided into two categories: Charge Coupled Device (CCD) and Complementary Metal-Oxide Semiconductor (CMOS). Among them, CMOS image sensor (CIS, CMOS Image Sensor) has developed rapidly in recent years due to its high integration, low power consumption, fast speed, and low cost. It has increasingly replaced CCD image sensors in various applications. In electronic products. [0003] However, the transmission speed of CMOS image sensors still needs to be improved. Summary of the invention [0004] The problem solved by the present invention ...

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Problems solved by technology

[0003] However, the transmission speed of CMOS image sensor still needs to be improved

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