A Cascaded Distributed Low Noise Amplifier

A low-noise amplifier and amplifier technology, applied in amplifiers, amplifier types, radio frequency amplifiers, etc., can solve the problem of inability to effectively improve the amplifier's gain-bandwidth product, and achieve the effects of simple structure, high gain, and low input return loss.

Active Publication Date: 2021-07-20
NANJING UNIV OF POSTS & TELECOMM +1
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Commonly used broadband amplifier design techniques include negative feedback, balanced amplifiers, resistor matching, and active matching, etc., but none of these techniques can effectively improve the gain-bandwidth product of the amplifier.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Cascaded Distributed Low Noise Amplifier
  • A Cascaded Distributed Low Noise Amplifier
  • A Cascaded Distributed Low Noise Amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] Embodiments of the present invention will be described below in conjunction with the accompanying drawings.

[0019] The basic principle of the traditional distributed low noise amplifier is to form an artificial transmission line with the parasitic capacitance of the transistor and the inductance element, so as to overcome the gain roll-off caused by the parasitic capacitance. The circuit schematic diagram is as follows figure 1 Shown, where vdd is the supply voltage, vgs is the DC bias voltage, the on-chip inductor Lg and the input impedance of the gain unit constitute the input artificial transmission line, and the on-chip inductor Ld and the output impedance of the gain unit constitute the output artificial transmission line. Obviously, the input / output artificial transmission lines are all low-pass filter structures.

[0020] According to the principle analysis of the distributed low noise amplifier, the input and output terminals of the distributed low noise ampl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a cascaded distributed low-noise amplifier, which includes a first-stage amplifier, a second-stage amplifier and a third-stage amplifier. The structures of the gain units are exactly the same; wherein, the on-chip inductance and the input impedance of each gain unit constitute an input artificial transmission line, and the on-chip inductance and the output impedance of each gain unit constitute an output artificial transmission line; and, the amplifiers of all stages All the gain units adopt the structure of single-ended input to differential output. The invention has simple structure, low input return loss, small in-band fluctuation, high gain and low noise figure, can overcome the limitation of the gain-bandwidth product of traditional amplifiers, obtain relatively large flat gain in a very wide frequency band, and realize good noise performance.

Description

technical field [0001] The invention relates to a cascaded distributed low noise amplifier, which belongs to the technical field of radio frequency integrated circuits. Background technique [0002] The rapid development of wireless communication technology puts forward higher requirements on the data transmission rate and bandwidth of the communication system. Commonly used broadband amplifier design techniques include negative feedback, balanced amplifiers, resistor matching, and active matching, etc., but none of these techniques can effectively improve the gain-bandwidth product of the amplifier. Due to its structural characteristics, the distributed amplifier can break through the limitation of the gain-bandwidth product of the amplifier and realize wider-band signal amplification. [0003] Monolithic microwave integrated circuits are widely used in many fields such as wireless communication, satellite communication network, millimeter wave automatic collision avoidanc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H03F3/195H03F1/26H03G3/30
CPCH03F1/26H03F3/195H03F2200/451H03F2200/54H03G3/3036
Inventor 张瑛张旭李泽有耿萧
Owner NANJING UNIV OF POSTS & TELECOMM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products