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Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby

A mask and pattern technology, applied to the originals for photomechanical processing, photosensitive materials for photomechanical equipment, photomechanical equipment, etc., can solve problems such as roller deformation, and achieve the effect of reducing unevenness

Active Publication Date: 2018-07-31
LG CHEM LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, although mechanical reinforcement is performed, local deformation of the roller mainly occurs due to the fluid characteristics of the photosensitive resin, and such as Figure 5 The steps of the pattern at various positions shown in , as a result, stains visible to the naked eye were observed

Method used

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  • Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby
  • Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby
  • Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby

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preparation example Construction

[0073] Still another exemplary embodiment of the present specification provides a method of manufacturing a film mask, the method of manufacturing including:

[0074] forming a darkened light-shielding pattern layer on the transparent substrate; and

[0075] A relief pattern portion is formed on the surface of the transparent substrate provided with the darkened light-shielding pattern layer.

[0076] The formation of the darkened light-shielding pattern layer can be performed by forming a darkened light-shielding layer on a transparent substrate using a material for forming a darkening light-shielding pattern layer, and then performing photoresist (PR) coating, ultraviolet exposure, development, etching and stripping process. Said steps can go through a verification and repair process as needed.

[0077] Formation of the embossed pattern portion may be performed by a process of applying an adhesive resin and exposing to ultraviolet rays, and then applying and exposing a res...

Embodiment 1

[0084] A urethane-based material was used to form an adhesion layer on a PET substrate with a thickness of 250 μm, plasma pretreatment was performed, and then an Al layer with a thickness of 100 nm was formed by sputtering. An AlOxNy layer (x>0 and 0.3≤y≤1) is formed by reactive sputtering by adding reactive gas nitrogen on the Al layer. Subsequently, a positive photoresist (manufactured by DongJinSemichem Co., Ltd., N200) was coated and fixed on a stage, and UV exposure was performed using a UV laser with a wavelength of 365 nm. Subsequently, a photoresist pattern was formed by developing using a 1.38% TMAH solution. Using the photoresist pattern, the Al layer and the AlOxNy layer were etched using an acid solution, and stripped using a stripping solution (LG Chem., LG202) to form a pattern. At this time, the openings of the AlOxNy layer were designed so that the pitch of the dot pattern with a diameter of 15 μm was 115 μm.

[0085] Subsequently, an adhesive layer was coate...

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Abstract

The present application relates to a film mask, a method for manufacturing same, and a method for forming a pattern using a film mask and a pattern formed thereby, the film mask comprising: a transparent substrate; a darkened light-shielding pattern layer provided on top of the transparent substrate; and an embossed pattern portion provided on the surface where the darkened light-shielding patternlayer is provided.

Description

technical field [0001] This application claims priority and benefit from Korean Patent Application No. 10-2016-0010240 filed in the Korean Intellectual Property Office on Jan. 27, 2016, the entire contents of which are incorporated herein by reference. [0002] The present application relates to a film mask, a manufacturing method thereof, a pattern forming method using the film mask, and a pattern formed by the film mask. Background technique [0003] When the roll-to-roll photolithography technique based on a conventional film mask cannot secure adhesion to a substrate to be patterned, a reduction in the resolution of the pattern and a deviation in each position occur. In order to overcome the bias in patterning the various locations, a lamination process was introduced to maximize the adhesion of the film mask in the UV-exposed area to the substrate during the patterning process. However, the lamination process has a disadvantage in that it is difficult to maintain preci...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20H01L21/033G03F7/004G03F7/26
CPCG03F1/48G03F1/76G03F7/0002G03F7/70791H01L21/033G03F7/004G03F7/2002G03F7/2014G03F7/2047G03F7/26H01L21/0337H01L2224/95115G03F1/38G03F7/20G03F7/30
Inventor 黄智泳徐汉珉裵南锡李承宪吴东炫柳正善
Owner LG CHEM LTD
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