Preparation method of silica-doped high-performance graphene material

A graphene and silicon doping technology, applied in the field of graphene doping, can solve the problems of mild reaction conditions, no environmental protection, etc., and achieve the effects of mild reaction conditions, low cost, and simple and easy preparation method

Active Publication Date: 2018-08-03
SHAOXING UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Aiming at the problems in the prior art, the present invention provides a method for preparing a silicon-doped high-performance graphene material, which solves the blank of silicon-doped graphene in the prior art, and not only fills the gap in the preparation method of silicon-doped graphene. Blank, and the reaction conditions are mild, no environmental problems

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  • Preparation method of silica-doped high-performance graphene material
  • Preparation method of silica-doped high-performance graphene material

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Effect test

Embodiment 1

[0033] A kind of preparation method of silicon-doped high-performance graphene material, described preparation method comprises the steps:

[0034] Step 1, adding graphene oxide to deionized water, and then adding a dispersant to ultrasonically disperse for 20 minutes to obtain a graphene oxide dispersion;

[0035] Step 2, adding the sodium hydroxide solution to the graphene oxide dispersion for 1 hour of microwave reaction to obtain an alkalized graphene oxide dispersion;

[0036] Step 3, adding ethyl silicate and tea polyphenols to absolute ethanol in sequence, stirring evenly, and slowly adding them dropwise into the alkalized graphene oxide dispersion for gradient microwave reaction for 3 hours to obtain a reaction mixture;

[0037] Step 4, adding hydrochloric acid to the reaction mixture until neutrality is formed, then ultrasonically reacting for 30 minutes, and obtaining graphene precipitation after filtration;

[0038] Step 5, putting the graphene precipitate into abs...

Embodiment 2

[0050] A kind of preparation method of silicon-doped high-performance graphene material, described preparation method comprises the steps:

[0051] Step 1, adding graphene oxide to deionized water, and then adding a dispersant to ultrasonically disperse for 40 minutes to obtain a graphene oxide dispersion;

[0052] Step 2, adding the sodium hydroxide solution to the graphene oxide dispersion and reacting with microwaves for 3 hours to obtain an alkalized graphene oxide dispersion;

[0053] Step 3, adding ethyl silicate and tea polyphenols to absolute ethanol in sequence, stirring evenly and slowly adding them dropwise to the alkalized graphene oxide dispersion for 5 hours of gradient microwave reaction to obtain a reaction mixture;

[0054]Step 4, adding hydrochloric acid to the reaction mixture until neutrality is formed, then ultrasonically reacting for 60 minutes, and obtaining graphene precipitation after filtration;

[0055] Step 5, put the graphene precipitate into abso...

Embodiment 3

[0067] A kind of preparation method of silicon-doped high-performance graphene material, described preparation method comprises the steps:

[0068] Step 1, adding graphene oxide to deionized water, and then adding a dispersant to ultrasonically disperse for 30 minutes to obtain a graphene oxide dispersion;

[0069] Step 2, adding the sodium hydroxide solution to the graphene oxide dispersion and reacting with microwaves for 2 hours to obtain an alkalized graphene oxide dispersion;

[0070] Step 3, adding ethyl silicate and tea polyphenols to absolute ethanol in sequence, stirring evenly, and slowly adding them dropwise into the alkalized graphene oxide dispersion liquid for gradient microwave reaction for 4 hours to obtain a reaction mixture;

[0071] Step 4, adding hydrochloric acid to the reaction mixture until neutrality is formed, then ultrasonically reacting for 50 minutes, and obtaining graphene precipitation after filtration;

[0072] Step 5, put the graphene precipita...

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Abstract

The invention discloses a preparation method of a silica-doped high-performance graphene material. The preparation method comprises the following steps: step one, adding graphene oxide into deionizedwater, then adding a dispersing agent and carrying out ultrasonic dispersion for 20 to 40 minutes to obtain graphene oxide dispersion liquid; step two, adding a sodium hydroxide solution into the graphene oxide dispersion liquid and carrying out microwave reaction for 1 to 3 hours to obtain alkalized graphene oxide dispersion liquid; step three, adding ethyl silicate and tea polyphenol in sequenceinto absolute ethyl alcohol; after uniform stirring, slowly dropwise adding a mixed solution into the alkalized graphene oxide dispersion liquid and carrying out gradient microwave reaction for 3 to5 hours to obtain a reaction mixed solution; step four, adding hydrochloric acid into the reaction mixed solution until neutral is formed; then carrying out ultrasonic reaction for 30 to 60 minutes and filtering to obtain graphene precipitate; step five, putting the graphene precipitate into the absolute ethyl alcohol and carrying out ultrasonic reaction for 20 to 40 minutes, filtering and dryingto obtain the silica-doped graphene material. The preparation method of the silica-doped high-performance graphene material, disclosed by the invention, has the advantages that the blank of the preparation method of silica-doped graphene is filled up; in addition, reaction conditions are mild and environmental protection problems are avoided.

Description

technical field [0001] The invention belongs to the technical field of graphene doping, and in particular relates to a method for preparing a silicon-doped high-performance graphene material. Background technique [0002] The discovery of graphene confirmed the stable existence of two-dimensional materials and opened up a new stage of research on two-dimensional materials. The carrier mobility can reach 200,000cm2 / V.s, which provides a basis for its ability to manufacture high-frequency electrons. The absorption of light by single-layer graphene is 2.3%, which makes it a kind of optoelectronic device research. important material. However, while graphene has excellent photoelectric properties, it has a very serious defect, that is, the band gap is zero, which limits its application in micro-nano optoelectronic devices. In current experiments, methods such as preparing graphene nanobelts are usually used to open the energy bands of graphene, but the energy band sizes are all...

Claims

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Application Information

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IPC IPC(8): C01B32/192C01B32/184
CPCC01B32/184C01B32/192C01B2204/30C01B2204/20C01B2204/24C01B2204/22
Inventor 方泽波冀婷
Owner SHAOXING UNIVERSITY
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