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Etching composition

A composition and etching technology, applied in the field of etching compositions, can solve problems such as increased defect rate, fast etching speed, etc., and achieve the effects of reducing brightness, increasing the number of etching treatment pieces, and suppressing residues

Inactive Publication Date: 2018-08-03
ENF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the existing etchant as mentioned above has the problem that the etching speed of copper film and other metal films is too fast, or the taper angle of the etched metal pattern exceeds about 90 °, that is, the problem of having an inverted cone shape
In addition, when the concentration of copper ions increases, the copper ions react with hydrogen peroxide to form free radicals, and the formed free radicals decompose the organic matter contained in the composition to change the characteristics of the etching solution, thus leading to problems such as increased defect rates

Method used

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Examples

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Embodiment 1～7 and comparative example 1～6

[0076] Each component of the composition described in Table 1 below was mixed to prepare etching compositions of Examples 1 to 7 and Comparative Examples 1 to 6 of the present invention.

[0077] [Table 1]

[0078]

[0079]

[0080] In order to evaluate the effect of the etching composition prepared by the above method, it was vapor-deposited with a barrier metal on a TFT-LCD GLS Molybdenum film, evaporated on it thick copper film, and then perform photolithography (Photolithography) process to form a pattern, thereby preparing a test piece. In order to confirm the etching characteristics (cone angle, etching deviation) of each etching composition, each test piece was etched with the EPD standard as 50% using a mini-etcher device, and copper powder was dissolved 300ppm and 5000ppm cumulatively in order to observe the number of etching treatments , 7000ppm and evaluation of the test piece, using a scanning electron microscope (manufactured by Hitachi, SU8010) observat...

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Abstract

The invention relates to an etching composition. More specifically, provided is an etching composition used for etching a transitional metal film of an electrode of a TFT-LCD display. According to theetching composition, excellent etching features exist such as etching deviation, taper angles and tail length even if the content of metal ions in the etching liquid is high. Accordingly, the etchingcomposition can be effectively used for manufacturing electrodes of the TFT-LCD display and an OLED.

Description

technical field [0001] The present invention relates to an etching composition, and more particularly, to an etching composition for etching a transition metal film (especially a ketone and / or molybdenum metal film) used as an electrode or the like of a TFT-LCD display. Background technique [0002] Generally, a thin film transistor (Thin Film Transistor, TFT) is used as a circuit board for independently driving each pixel in a liquid crystal display device or an organic EL (Electro Luminescence, electroluminescence) display device. The TFT is composed of scanning signal lines or gate lines for transmitting scanning signals, image signal lines or data lines for transmitting image signals, thin film transistors connected to the gate lines and data lines, and pixel electrodes connected to the thin film transistors. The formation process for forming the wiring of the TFT generally consists of a sputtering process for forming a metal film; a photoresist forming process for formi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18C23F1/26
CPCC23F1/18C23F1/26
Inventor 李宝研朴钟模李熙雄安镐源金世训
Owner ENF TECH
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