Composite channel transistor and preparation method thereof

Abstract

The invention discloses a composite channel transistor comprising the following parts: an interlayer dielectric layer formed on a semiconductor substrate; a grid electrode formed in the interlayer dielectric layer; a grid dielectric layer arranged on the grid electrode; a composite channel layer located on the grid dielectric layer and the interlayer dielectric layer; source drain zones formed ontwo ends of the composite channel layer; a passivation layer formed on the interlayer dielectric layer and that wraps the periphery and top surface of the composite channel layer; source-drain electrodes arranged in the passivation layer and connected with the source drain zones. The method uses a high mobility graphene and an organic film with adjustable band gaps to commonly form the composite channel layer, thus effectively solving the problems that the graphene has no band gap and the organic film transistor is low in mobility; the method can prepare the composite channel transistor with ahigh mobility, is compatible with existing CMOS process, simple and feasible in preparation process, and can easily prepare a composite channel transistor array with a small size and a large scale; the invention also discloses the composite channel transistor preparation method.

Description

Technical field [0001] The present invention relates to the technical field of semiconductor integrated circuit manufacturing, and more specifically, to a composite channel transistor and a preparation method thereof. Background technique [0002] As the feature size of semiconductor devices shrinks in proportion, the chip integration degree continues to increase. Due to process limitations and various negative effects, traditional silicon-based semiconductor devices can no longer meet the performance and power consumption requirements of devices and circuits. Major domestic and foreign scientific research institutions and semiconductor manufacturers have studied various new materials and new device structures in order to replace the existing silicon semiconductor devices. [0003] In recent years, graphene due to its ultra-high electron mobility (up to 200,000 cm 2 / Vs) has become a research hotspot, but because graphene does not have a bandgap, its prospects for applications simi...

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Problems solved by technology

[0008] However, most organic materials are not very conductive due to their low mobility

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