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Light-emitting diode and method of manufacturing the same

A technology for light-emitting diodes and a manufacturing method, which can be applied to semiconductor devices, electrical components, circuits, etc., and can solve problems such as reduced reflectivity, inability to ohmic bonding of compound semiconductor layers, etc.

Inactive Publication Date: 2018-08-10
RESONAC HOLDINGS CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, such a reflective layer using a metal with high reflectivity cannot be ohmicly bonded to an aluminum gallium indium phosphide-based compound semiconductor layer.
[0007] In addition, if the compound semiconductor layer and the reflective layer are in direct contact, the compound semiconductor layer and the reflective layer react to form an alloy layer, which may cause a problem of lower reflectivity.

Method used

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  • Light-emitting diode and method of manufacturing the same
  • Light-emitting diode and method of manufacturing the same
  • Light-emitting diode and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0276] Example 1 is figure 1 and figure 2 Example of the embodiment shown.

[0277] In the light-emitting diode of Example 1, at first, a Mo layer (foil, plate) with a thickness of 75 μm is sandwiched by two Cu layers (foil, plate) with a thickness of 10 μm, and heat-compression bonding is performed to form a metal plate (monolithic sheet) with a thickness of 95 μm. before cutting off). The upper surface and the lower surface of the metal plate are polished to make the upper surface glossy, and then cleaned with an organic solvent to remove dirt. Then, on the entire surface of the metal plate, a 2 μm Ni layer and a 1 μm Au layer were sequentially formed as a metal protective film by an electroless plating method to fabricate a metal substrate (metal substrate before cutting into pieces) 1 .

[0278] Then, compound semiconductor layers were sequentially stacked on a GaAs substrate 21 formed of Si-doped n-type GaAs single crystal to fabricate an epitaxial wafer with an emi...

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Abstract

To provide a light-emitting diode that prevents reduction in reflective index and enables high-luminance light emission, and to provide a method of manufacturing the same. The method of manufacturinga light-emitting diode includes a step of forming a compound semiconductor layer including a light-emitting layer and a current diffusion layer in order on a substrate for growth; a step of forming aplurality of dot-like ohmic contact electrodes arranged at intervals on the current diffusion layer; a step of forming a transparent film on the current diffusion layer so as to expose peripheral portions of surfaces of the plurality of ohmic contact electrodes; a step of forming a reflective layer on the transparent film and the exposed portions of the ohmic contact electrodes; a step of forminga bonding layer on the reflective layer; a step of bonding the substrate on the bonding layer; and a step of removing the substrate for growth.

Description

[0001] This application is a divisional application of a patent application with an application date of August 7, 2012, an application number of 201280037525.1, and a patent application titled "Light Emitting Diode and Its Manufacturing Method". technical field [0002] The present invention relates to a light emitting diode and its manufacturing method. [0003] This application claims priority based on Patent Application No. 2011-175888 for which it applied in Japan on August 11, 2011, and uses the content here. Background technique [0004] Conventionally, as a high-brightness light-emitting diode (English abbreviation: LED) emitting red and infrared light, for example, a compound semiconductor light-emitting diode having a light-emitting layer made of aluminum gallium arsenide (composition formula al X Ga 1- X As; 0≤X≤1) the light-emitting layer formed by indium gallium arsenide (composition formula In X Ga 1-X As; 0≤X≤1) to form a light-emitting layer. On the othe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/38H01L33/60
CPCH01L33/387H01L33/405H01L33/38H01L33/14H01L2933/0016H01L33/0093H01L33/60
Inventor 德永悠松村笃
Owner RESONAC HOLDINGS CORPORATION