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AIN (aluminium nitride)/silicon-containing arylacetylene resin composite material as well as preparation method and application thereof

A resin composite material, silicon aryl alkyne technology, used in semiconductor/solid-state device parts, electrical components, circuits, etc., can solve the problem of inability to meet the high thermal conductivity of packaging materials, and achieve excellent electrical insulation performance, low dielectric constant. Effect

Inactive Publication Date: 2018-08-14
EAST CHINA UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to overcome the defect that the silicon-containing aryne resin in the prior art cannot meet the high thermal conductivity required by the packaging material, and provide an AlN / silicon-containing aryne resin composite material and its preparation method and application

Method used

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  • AIN (aluminium nitride)/silicon-containing arylacetylene resin composite material as well as preparation method and application thereof
  • AIN (aluminium nitride)/silicon-containing arylacetylene resin composite material as well as preparation method and application thereof
  • AIN (aluminium nitride)/silicon-containing arylacetylene resin composite material as well as preparation method and application thereof

Examples

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Effect test

Embodiment 1

[0075] Preparation of modified silicon-containing aryne resin (AlN-dl411 / PSA-1) filled with modified aluminum nitride

[0076] Firstly, aluminum nitride was surface-modified with aluminate coupling agent to obtain modified aluminum nitride (AlN-dl411). Weigh 100g of tetrahydrofuran into a 500mL three-necked round-bottomed flask with mechanical stirring, add 30g of aluminum nitride (AlN) under stirring, ultrasonicate for 60min, add 0.9g of aluminate, and adjust the pH of the dispersion to 6 with glacial acetic acid , continue to stir and sonicate for 30min, heat to 60°C with an oil bath and stir for 2 hours; then add 70g of silicon-containing aryne resin PSA-E, sonicate for 1h, stir at room temperature for 2h to obtain a mixed solution, and then pass through -0.09 ~-0.1MPa vacuum distillation, removal of tetrahydrofuran solvent at 50°C, to obtain a viscous blend, aluminum nitride-modified silicon-containing aryne resin (AlN-dl411 / PSA-1), which was heated at 170°C / 2h and 210°C...

Embodiment 2

[0078] Preparation of modified silicon-containing aryne resin (AlN-dl411 / PSA-2) filled with modified aluminum nitride

[0079] Firstly, aluminum nitride was surface-modified with aluminate coupling agent to obtain modified aluminum nitride (AlN-dl411). Weigh 100g of tetrahydrofuran into a 500mL three-necked round-bottomed flask with mechanical stirring, add 40g of aluminum nitride (AlN) under stirring, ultrasonicate for 60min, add 1.2g of aluminate, and adjust the pH of the dispersion to 6 with glacial acetic acid , continue to stir and sonicate for 30min, heat to 60°C with an oil bath and stir for 2 hours; then add 60g of silicon-containing aryne resin PSA-E, sonicate for 1h, stir at room temperature for 2h to obtain a mixed solution, and then pass through -0.09 ~-0.1MPa vacuum distillation, removal of tetrahydrofuran solvent at 50°C, to obtain a viscous blend, aluminum nitride-modified silicon-containing aryne resin (AlN-dl411 / PSA-2), which was heated at 170°C / 2h and 210°C...

Embodiment 3

[0081] Preparation of modified silicon-containing aryne resin (AlN-dl411 / PSA-3) filled with modified aluminum nitride

[0082] Firstly, aluminum nitride was surface-modified with aluminate coupling agent to obtain modified aluminum nitride (AlN-dl411). Weigh 100g of tetrahydrofuran into a 500mL three-necked round-bottomed flask with mechanical stirring, add 50g of aluminum nitride (AlN) under stirring, ultrasonicate for 60min, add 1.5g of aluminate, and adjust the pH of the dispersion to 6 with glacial acetic acid , continue to stir and sonicate for 30min, heat to 60°C with an oil bath and stir for 2 hours; then add 50g of silicon-containing aryne resin PSA-E, sonicate for 1h, stir at room temperature for 2h to obtain a mixed solution, and then pass through -0.09 ~-0.1MPa vacuum distillation, removal of tetrahydrofuran solvent at 50°C, to obtain a viscous blend, aluminum nitride-modified silicon-containing aryne resin (AlN-dl411 / PSA-3), which was heated at 170°C / 2h and 210°C...

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Abstract

The invention discloses an AIN (aluminium nitride) / silicon-containing arylacetylene resin composite material as well as a preparation method and application thereof. The preparation method comprises the following steps: carrying out surface modification on an AIN particle in a solvent, and then evenly mixing with silicon-containing arylacetylene resin; after completely dissolving the silicon-containing arylacetylene resin , cooling and removing the solvent. The AIN particle occupies 20-60 percent of the total mass of the AIN particle and the PSA-E in raw materials. By adopting a thermal conductive filler AIN / silicon-containing arylacetylene resin, the prepared material has a high thermal conductivity coefficient; meanwhile, the thermal stability of resin is improved, and excellent electrical insulation property of the resin is reserved.

Description

technical field [0001] The invention relates to the technical fields of polymer chemistry, polymer physics and polymer material modification, in particular to an AlN / silicon-containing aryne resin composite material and its preparation method and application. Background technique [0002] The wide-bandgap semiconductor materials and electronic packaging materials represented by group IIIA nitrides have developed rapidly, and are called the first-generation semiconductors represented by Si and the second-generation semiconductors represented by gallium arsenide (GaAs). Three generations of semiconductors. Aluminum nitride (AlN), as a typical group IIIA nitride, has attracted more and more researchers' attention. Aluminum nitride is a [AlN 4 ] Tetrahedron is a covalent bond compound with a structural unit, which has a hexagonal wurtzite structure. As a new advanced ceramic material, aluminum nitride has many excellent properties. Aluminum nitride has high thermal conductiv...

Claims

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Application Information

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IPC IPC(8): C08L83/16C08K9/04C08K3/28H01L23/29
CPCC08K3/28C08K9/04C08K2003/282C08K2201/003C08L2201/08C08L2203/206H01L23/295C08L83/16
Inventor 袁荞龙黄发荣王玉巧
Owner EAST CHINA UNIV OF SCI & TECH