A kind of manufacturing technology of bipolar circuit board
A manufacturing process and circuit board technology, applied in the direction of circuit, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of poor transistor performance, low protection coefficient, and inability to form ohmic contact, etc., to achieve good electrical isolation and migration The effect of high efficiency and few defects
Active Publication Date: 2021-12-17
东莞市美威电子科技有限公司
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Problems solved by technology
[0004] The purpose of the invention is to provide a kind of manufacturing process of bipolar circuit board, to solve the manufacturing process of current bipolar circuit board proposed in the above-mentioned background technology, there is electrical isolation effect not ideal; Transistor working performance is relatively poor and cannot form The necessary medium for ohmic contact; the problems of poor production effect and low protection factor of bipolar circuit boards
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[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0025] see figure 1 , the invention provides a technical solution: a manufacturing process of a bipolar circuit board, comprising the following steps:
[0026] S1. Selection of the substrate: select the silicon wafer with crystal orientation and select the resistivity of the substrate ρ≈10Ω.cm;
[0027] S2. The first photolithography: n+buried layer diffusion hole photolithography, all components of the bipolar integrated circuit are interconnected from the ...
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The invention discloses a manufacturing process of a bipolar circuit board, comprising the following steps: S1, selection of a substrate: selecting a silicon chip with a <100> crystal orientation and selecting the resistivity of the substrate ρ≈10Ω.cm; S2, The first photolithography: n+ buried layer diffusion hole photolithography; S3, growing epitaxial layer; S4, the second photolithography: P isolation diffusion hole photolithography; S5, the third photolithography: N-type base diffusion hole Photolithography; S6, fourth photolithography: photolithography of N+ emitter area and collector ohmic contact area; S7, fifth photolithography: photolithography of lead hole; S8, deposition of aluminum: using metal aluminum as electrode lead, conducting For the deposition of aluminum, a layer of metal aluminum is deposited on the surface by evaporation and sputtering; S9, the sixth photolithography: anti-etch aluminum, engrave the corresponding aluminum strip shape according to the connection requirements of the circuit, and remove the excess surface The aluminum film is removed by back etching to make an npn transistor.
Description
technical field [0001] The invention relates to the technical field of circuit board production, in particular to a bipolar circuit board production process. Background technique [0002] The typical pn junction isolation process is the most primitive process to realize integrated circuit manufacturing. The bipolar integrated circuit manufacturing process produced so far is completed by adding appropriate processes to achieve specific purposes on this basis. [0003] The current manufacturing process of bipolar circuit boards has the problems of unsatisfactory electrical isolation; poor performance of transistors and inability to form the necessary medium for ohmic contact; poor manufacturing effect of bipolar circuit boards and low protection factor. Contents of the invention [0004] The purpose of the invention is to provide a kind of manufacturing process of bipolar circuit board, to solve the manufacturing process of current bipolar circuit board proposed in the above...
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IPC IPC(8): H01L21/82H01L21/77
CPCH01L21/77H01L21/82
Inventor 沈利明
Owner 东莞市美威电子科技有限公司