Humidity sensor based on double-electric layer thin film transistor, and production method thereof

Abstract

The invention discloses a humidity sensor based on a double-electric layer thin film transistor, and a production method thereof. The humidity sensor comprises: a substrate; a semiconductor layer formed on the substrate; a source electrode and a drain electrode which are formed above or below the semiconductor layer and respectively correspond to the top contact structure of a top gate and the bottom contact structure of the top gate; a gate dielectric layer formed on the source electrode, the drain electrode and the semiconductor layer; and a gate electrode formed on the gate dielectric layer, wherein the gate dielectric layer adopts a humidity-sensitive dielectric material. The top gate structure is adopted, and a traditional insulating gate dielectric is replaced with the humidity-sensitive gate dielectric; carrier ion-ion coupling occurs on the interface of the semiconductor and the gate dielectric after a voltage is applied to the gate electrode by using the proton concentration variation caused by the interaction of the gate dielectric and moisture in air in order to form double electric layers; and the carrier concentration in channels of the semiconductor can be effectivelycontrolled, and the resistance between the source electrode and the drain electrode is correlated to the water molecule concentration to achieve the effective detection of the ambient humidity.

Description

technical field [0001] The invention belongs to the field of humidity sensors in sensitive electronic devices, and in particular relates to a humidity sensor based on an electric double layer thin film transistor and a preparation method thereof. Background technique [0002] Humidity sensors are in wide demand in many fields such as meteorology, agriculture, industrial control, and medical equipment. At present, the most widely studied and applied humidity sensors are resistive, capacitive and optical (A. Tripathy, et.al, Sensors, 14, 2014, 16343). The former two sense humidity by measuring resistance and capacitance respectively, and the common structures are thin film resistance and parallel plate capacitance. Materials used for sensing can be classified into types such as porous ceramics, polymers, and electrolytes. In terms of morphology, in addition to porous materials, nanomaterials such as nanoparticles and nanowires have also been reported in recent years (Yeow, S...

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Problems solved by technology

In terms of application, most of them focus on its switching function in the circuit, while the research on sensing mostly focuses on the sensing of ions in the solution, and there is no report on using it specifically to sense the humidity in the air.

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