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Photoelectric detector

A photodetector and photoelectric conversion technology, applied in the field of photodetectors, can solve problems such as large dark current, and achieve the effects of small dark current, reducing threading dislocations and alleviating stress

Active Publication Date: 2018-08-24
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] The main purpose of the present application is to provide a photodetector to solve the problem that the dark current of the photodetector in the prior art is relatively large

Method used

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Embodiment Construction

[0035] It should be pointed out that the following detailed description is exemplary and intended to provide further explanation to the present application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

[0036]It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly dictates otherwise, the singular is intended to include the plural, and it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, they mean There are features, steps, operations, means, components and / or combinations thereof.

[0037] It will be understood that when an element such as a layer, film, region, or substrate is referred to as b...

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Abstract

The invention provides a photoelectric detector. The photoelectric detector comprises a substrate silicon layer, a buried silicon dioxide layer located on one part of the surface of the substrate silicon layer, a top silicon layer positioned on the surface of the buried silicon dioxide layer, a P type light-doped layer positioned on the surface of the substrate silicon layer that is not provided with the buried silicon dioxide layer, and a photoelectric conversion layer positioned on the surface, far away from the substrate silicon layer, of the P type light-doped layer. The part of the substrate silicon layer, the buried silicon dioxide layer and the top silicon layer form an optical coupling area and a waveguide area. The top silicon layer in the optical coupling area is provided with acoupling grating. The material of the P type light-doped layer comprises a first intrinsic semiconductor material. The photoelectric conversion layer is provided with an intrinsic region, a P-type region and an N-type region. The material of the photoelectric conversion layer comprises a second intrinsic semiconductor material. The first intrinsic semiconductor material is the same as the second intrinsic semiconductor material. The dark current of the photoelectric detector is small.

Description

technical field [0001] The present application relates to the field of semiconductors, in particular, to a photodetector. Background technique [0002] In the field of optical communication and optical interconnection, high-speed photoelectric transceiver modules are an indispensable part, and photodetectors, as one of the core devices of high-speed transceiver modules, are very important to the overall performance of the entire optical communication system and optical interconnection system. influences. [0003] Since the substrate silicon layer, buried silicon dioxide layer and top silicon layer contained in the SOI substrate form a sandwich structure, this structure can not only effectively improve the integration of CMOS electrical devices; at the same time, the dielectric formed on the top silicon layer Cladding (this dielectric cladding has two functions: one is to protect the structure formed on the top layer of silicon, which is also called passivation; the other is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/105H01L31/0352
CPCH01L31/035272H01L31/105
Inventor 刘道群李志华唐波张鹏李彬
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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