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A kind of zirconia modified graphitic carbon nitride photocatalyst and preparation method thereof

A carbon nitride photocatalyst technology, applied in the field of materials, can solve the problems of large band gap, low photocatalytic activity, and weak light absorption intensity of zirconia, and achieve high photocatalytic stability, high photocatalytic activity, and easy availability of raw materials Effect

Active Publication Date: 2020-03-31
YANSHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, zirconia has a large band gap and weak light absorption intensity, which makes its photocatalytic activity low, which is not conducive to practical applications.

Method used

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  • A kind of zirconia modified graphitic carbon nitride photocatalyst and preparation method thereof
  • A kind of zirconia modified graphitic carbon nitride photocatalyst and preparation method thereof
  • A kind of zirconia modified graphitic carbon nitride photocatalyst and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Take 0.3 g of zirconium powder (Sanhe Haite Technology Co., Ltd.) in a plastic beaker, add dropwise 2 mL of hydrofluoric acid (concentration: 40%) and keep stirring until it is completely dissolved, then add dropwise 4 mL of hydrofluoric acid with a concentration of 2 mol / L Sodium solution until the white precipitate no longer occurs. The solution was filtered and washed several times until the pH was equal to 7, and the white zirconium hydroxide precipitate was dried in an oven at 80°C for 24 hours; 30 grams of urea (Tianjin Kaitong Chemical Reagent Co., Ltd.) and 30 mg of zirconium hydroxide were poured into Put it into an agate mortar, stir, grind, and mix for 10 minutes; put the above mixture into an alumina porcelain ark, then place the porcelain ark in a muffle furnace for heat treatment, and heat up from room temperature at a rate of 10 degrees per minute to 500 degrees, and keep it warm for 2 hours, and then cool with the furnace to make a photocatalyst, pour th...

Embodiment 2

[0024] Take 0.3 g of zirconium powder (Sanhe Haite Technology Co., Ltd.) in a plastic beaker, add 2 mL of hydrofluoric acid (concentration: 40%) dropwise and keep stirring until completely dissolved, then add dropwise 4 mL of hydrofluoric acid with a concentration of 2 mol / liter. Sodium solution until the white precipitate no longer occurs. The solution was filtered and washed several times until the pH was equal to 7, and the white zirconium hydroxide precipitate was dried in an oven at 80°C for 24 hours; 30 g of urea (Tianjin Kaitong Chemical Reagent Co., Ltd.) and 10 mg of zirconium hydroxide were poured Into an agate mortar, stir well, grind, and mix for 10 minutes. Put the above mixture into an alumina porcelain ark, then place the porcelain ark in a muffle furnace for heat treatment, increase the temperature from room temperature to 450 degrees at a rate of 2 degrees per minute, keep it warm for 1 hour, and then cool with the furnace to produce Obtaining a photocatalyst...

Embodiment 3

[0027] Take 0.3 g of zirconium powder (Sanhe Haite Technology Co., Ltd.) in a plastic beaker, add dropwise 2 mL of hydrofluoric acid (concentration: 40%) and keep stirring until it is completely dissolved, then add dropwise 4 mL of hydrofluoric acid with a concentration of 2 mol / L Sodium solution until the white precipitate no longer occurs. The solution was filtered and washed several times until the pH was equal to 7, and the white zirconium hydroxide precipitate was dried in an oven at 80°C for 24 hours; 30 g of urea (Tianjin Kaitong Chemical Reagent Co., Ltd.) and 15 mg of zirconium hydroxide were poured Put it into an agate mortar, fully stir, grind, and mix for 10 minutes; put the above mixture into an alumina porcelain ark, then place the porcelain ark in a muffle furnace for heat treatment, and increase the temperature from room temperature at a rate of 5 degrees per minute to 500 degrees, and keep it warm for 2 hours, and then cool with the furnace to make a photocata...

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Abstract

A zirconium oxide modified graphite phase carbon nitride photocatalyst, the mass percentage of its chemical composition is: zirconium oxide is 0.42-1.21, and the rest is graphite phase carbon nitride; the preparation method of the above photocatalyst is mainly to take every 3 grams of urea Add 1-3 mg of zirconium hydroxide nanoparticles, pour urea and zirconium hydroxide nanoparticles into an agate mortar, stir, grind and mix thoroughly for 10 minutes; put the mixture into an alumina porcelain ark, from Raise the room temperature to 450-600 degrees at a heating rate of 2-30 degrees / minute, keep it warm for 1-2 hours, and then cool it in the furnace to obtain the photocatalyst material; pour the prepared photocatalyst material into an agate mortar and grind it thoroughly into a 1-5 micron powder to obtain a zirconium oxide-modified graphite phase carbon nitride photocatalyst. The invention has the advantages of easy operation, wide source of raw materials, stable physical properties, good environmental affinity and high photocatalytic activity, and is beneficial to actual production and application.

Description

technical field [0001] The invention belongs to the field of material technology, in particular to a photocatalyst and a preparation method. Background technique [0002] Graphite phase carbon nitride is a typical two-dimensional layered semiconductor material, which has the advantages of simple preparation method, readily available raw materials, stable physical and chemical properties, and non-toxic and harmless to the environment. Stronger results in higher photocatalytic activity. Therefore, carbon nitride has potential application prospects in the field of photocatalysis. However, on the other hand, the shortcomings of graphitic carbon nitride photogenerated carriers such as fast recombination speed and weak photocorrosion resistance lead to a significant decline in the catalytic activity of carbon nitride semiconductor materials in the actual photocatalytic process, which seriously restricts its industrialization. production and application. [0003] The semiconduct...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/24B01J37/03B01J37/08B01J37/04
CPCB01J27/24B01J37/0036B01J37/031B01J37/082B01J35/39
Inventor 张新宇杨成武秦家千马明臻刘日平
Owner YANSHAN UNIV