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A kind of directional arrangement high thermal conductivity interface material and preparation method thereof

A technology of interface material and directional arrangement, which is applied in the direction of heat exchange materials, chemical instruments and methods, etc., can solve the problems such as the difficulty of directional arrangement of thermally conductive fillers, and achieve the effect of meeting market demand, high degree of orientation, and simple preparation method

Active Publication Date: 2021-07-27
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Aiming at the deficiencies of the prior art, the technical problem to be solved by the present invention is to provide an oriented arrangement of high thermal conductivity interface material which can be applied to CPU or other electronic components for cooling. problems, and can achieve industrial production

Method used

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  • A kind of directional arrangement high thermal conductivity interface material and preparation method thereof
  • A kind of directional arrangement high thermal conductivity interface material and preparation method thereof
  • A kind of directional arrangement high thermal conductivity interface material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0034] This embodiment provides a method for preparing an aligned high thermal conductivity interface material, which includes the following steps:

[0035] (1) Premixing: Take 200g of carbon fiber, 300g of spherical alumina powder, 600g of vinyl silicone oil, 400g of hydrogen-containing silicone oil, 10g of platinum catalyst, and 10g of ethynyl cyclohexanol inhibitor into a vacuum mixer, and stir for 10 minutes to form a thermally conductive interface material Raw material 1;

[0036] (2) Injection: see figure 1 , put the above thermal interface material raw material 1 in the injection device, the injection device is connected to a rectangular insulating pipe 2 with a length of 3000 mm, a width of 20 mm, and a thickness of 3 mm, and the injection speed of the thermal interface material raw material 1 is 0.5 m / s (the injection direction is along the figure 1 The direction of the solid arrow in the center, horizontally to the right);

[0037] (3) Directional arrangement: the ...

Embodiment 2

[0040] This embodiment provides a method for preparing an aligned high thermal conductivity interface material, which includes the following steps:

[0041] (1) Premixing: Take 200g of carbon fiber, 300g of spherical alumina powder, 600g of vinyl silicone oil, 400g of hydrogen-containing silicone oil, 10g of platinum catalyst, and 10g of ethynyl cyclohexanol inhibitor into a vacuum mixer, and stir for 10 minutes to form a thermally conductive interface material raw material;

[0042](2) Injection: Place the above-mentioned thermal interface material raw material in the injection device, the injection device is connected to a rectangular insulating pipe with a length of 3000mm, a width of 20mm, and a thickness of 3mm, and the injection speed of the thermal interface material raw material is 0.5m / s;

[0043] (3) Directional arrangement: the copper plate on the lower surface of the rectangular insulated pipe is connected to a positive high voltage of 0.09kV, and the copper plate ...

Embodiment 3

[0045] This embodiment provides a method for preparing an aligned high thermal conductivity interface material, which includes the following steps:

[0046] (1) Premixing: Take 200g of graphene, 300g of spherical alumina powder, 600g of vinyl silicone oil, 400g of hydrogen-containing silicone oil, 10g of platinum catalyst, and 10g of ethynyl cyclohexanol inhibitor into a vacuum mixer, and stir for 10 minutes to form a thermal interface raw materials;

[0047] (2) Injection: Place the above-mentioned thermal interface material raw material in the injection device, the injection device is connected to a rectangular insulating pipe with a length of 3000mm, a width of 20mm, and a thickness of 3mm, and the injection speed of the thermal interface material raw material 1 is 0.5m / s;

[0048] (3) Directional arrangement: the copper plate on the lower surface of the rectangular insulated pipe is connected to a positive high voltage of 0.09kV, and the copper plate on the upper surface i...

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Abstract

The invention discloses an oriented arrangement high thermal conductivity interface material and a preparation method thereof. The oriented arrangement high thermal conductivity interface material is prepared from a heat conduction interface material raw material through thermal curing, and the heat conduction interface material raw material includes 20 to 40 parts by mass Anisotropic thermally conductive filler, 30-50 parts by mass of alumina, 60-80 parts by mass of dimethyl silicone oil or vinyl silicone oil, 40-60 parts by mass of hydrogen-containing silicone oil, 0.5-1 part by mass of catalyst and 0.5 parts by mass ~1 mass part of the inhibitor, the thermally conductive filler is oriented in the oriented high thermal conductivity interface material, forming oriented thermally conductive channels, and improving the thermal conductivity of the material. The preparation method provided by the invention is simple, solves the problem of difficult alignment of thermally conductive fillers, and can realize industrial production.

Description

technical field [0001] The invention relates to the field of heat-conducting high-molecular composite materials, in particular to an oriented high-heat-conducting interface material and a preparation method thereof. Background technique [0002] In recent years, with the continuous development of electronic components in the direction of miniaturization, integration, and high power, while their functions and performance have been continuously improved, power consumption and heat generation have also continued to increase. Every time the temperature of electronic components increases by 2°C, its reliability decreases by 10%. It can be seen that heat dissipation has become an important bottleneck restricting the rapid development of electronic technology. At present, the thermal conductivity of thermal interface composite materials on the market is mostly concentrated at 3-5W / m K, but with the development of microelectronics technology, the heat dissipation requirements are ge...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L83/07C08L83/04C08L83/05C08K13/04C08K7/06C08K7/18C08K7/00C08K3/08C08K3/04C09K5/14
CPCC08K2003/0806C08K2201/011C08L83/04C08L2205/025C09K5/14C08K13/04C08K7/06C08K7/18C08K3/042C08K3/041C08K7/00C08K3/08
Inventor 祝渊迟克禹吴淑文
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA