Unlock instant, AI-driven research and patent intelligence for your innovation.

Formation method of threshold adjustment layer of memory peripheral circuit and peripheral circuit structure

A threshold adjustment and peripheral circuit technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as the impact of memory performance, and achieve the effect of increasing process costs and improving performance

Active Publication Date: 2021-08-27
YANGTZE MEMORY TECH CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But this will cause all devices to be affected by the threshold adjustment injection, which will have a certain impact on the performance of the memory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Formation method of threshold adjustment layer of memory peripheral circuit and peripheral circuit structure
  • Formation method of threshold adjustment layer of memory peripheral circuit and peripheral circuit structure
  • Formation method of threshold adjustment layer of memory peripheral circuit and peripheral circuit structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The specific embodiments of a method for forming a threshold adjustment layer of a memory peripheral circuit provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0021] Please refer to figure 1 , a substrate 100 is provided, and the substrate 100 includes a high voltage region I of a peripheral circuit.

[0022] The substrate 100 may be a semiconductor material, such as a single crystal silicon substrate, a single crystal germanium substrate, an SOI (silicon on insulator) or GOI (germanium on insulator) substrate, etc. The substrate 100 may also be a P type doping or N-type doping. Those skilled in the art can select a suitable material as the substrate according to actual needs, which is not limited here.

[0023] The substrate 100 is used to form a memory, including a storage area and a peripheral circuit area, and the peripheral circuit area is used to form a peripheral circuit to control the memory cel...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a method for forming a threshold adjustment layer of a peripheral circuit of a memory and a peripheral circuit structure. The method for forming a threshold adjustment layer includes: providing a substrate, the substrate including a high-voltage area of ​​the peripheral circuit; A patterned mask layer is formed on the surface, and the patterned mask layer exposes at least part of the high voltage region; using the patterned mask layer as a mask, a threshold value adjustment implant is performed on the high voltage region, and in the high voltage region A threshold adjustment layer is formed inside and / or a gate dielectric layer of a high voltage device is formed on the surface of the high voltage region. The threshold adjustment layer is formed only in the high-voltage region to avoid affecting device performance in other regions.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a method for forming a threshold adjustment layer of a memory peripheral circuit and a peripheral circuit structure. Background technique [0002] In recent years, the development of flash memory (Flash Memory) memory is particularly rapid. The main feature of flash memory is that it can maintain stored information for a long time without power on, and has the advantages of high integration, fast access speed, easy erasing and rewriting, etc. has been widely used. [0003] In a semiconductor process, especially a memory formation process, it is very important to reduce the number of masks due to cost considerations, and it is necessary to minimize the number of masks and process steps. [0004] In the formation process of the flash memory, it is necessary to perform threshold adjustment implantation on the high voltage device region of the peripheral circuit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11526H01L27/11573H10B41/40H10B43/40
CPCH10B41/40H10B43/40
Inventor 许文山田武
Owner YANGTZE MEMORY TECH CO LTD