Ultra-wideband random laser scattering material based on amorphous bismuthate, laser device and preparation and application

A technology of scattering materials and random lasers, which is applied in the direction of laser scattering effects, laser components, lasers, etc., can solve the problems of difficult to achieve ultra-broadband and high cost, and achieve the effect of flexible form and simple production method

Active Publication Date: 2018-09-07
QILU UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, this kind of random laser structure is limited to the thin film structure, and the liquid crystal mat...

Method used

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  • Ultra-wideband random laser scattering material based on amorphous bismuthate, laser device and preparation and application
  • Ultra-wideband random laser scattering material based on amorphous bismuthate, laser device and preparation and application
  • Ultra-wideband random laser scattering material based on amorphous bismuthate, laser device and preparation and application

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Experimental program
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Embodiment 1

[0041] The chemical composition of the amorphous bismuth salt material of the present embodiment is Bi 2 o 3 : 65mol%; B2 o 3 : 20mol%; Ga 2 o 3 : 15mol%. Glass raw material selection of analytical pure Bi 2 o 3 , B 2 o 3 , Ga 2 o 3 . According to the mole percentage, after grinding and mixing evenly, put it in an alumina crucible, melt it at a certain temperature, pour the melt on a stainless steel plate, press it, anneal it at the glass transition temperature for 2 hours, and then ball mill the block material. The ball-milled powder was used as a strong scatterer, and the powder was dispersed in water to form a 15 mg / mL suspension. Take more than 1mL of the suspension, add 0.1mL of 10mM rhodamine 101-ethanol solution, and disperse by ultrasonic for 1 minute to obtain a suspension, and put the suspension into a transparent cuvette to obtain an ultra-broad band based on amorphous bismuthate. random laser device. Structural diagram such as figure 1 shown.

[0042...

Embodiment 2

[0044] The chemical composition of the amorphous bismuth salt material of the present embodiment is Bi 2 o 3 : 65mol%; B 2 o 3 : 20mol%; Ga 2 o 3 : 15mol%. Glass raw material selection of analytical pure Bi 2 o 3 , B 2 o 3 , Ga 2 o 3 . According to the molar percentage, after grinding and mixing evenly, put it in an alumina crucible, melt it at a certain temperature, pour the glass melt on a stainless steel plate, press it, anneal it for 2 hours near the glass transition temperature, and then ball mill the block material , the ball-milled powder is used as a strong scatterer, and the powder is compressed into thin flakes by a tablet press (pressure is 10 MPa). Mix 10 mL of 0.12 g / mL polyvinyl alcohol-water solution with 1 mL of 10 mM rhodamine 6G-ethanol solution. Use a pipette gun to draw 30 μl of the mixed solution and drop it on the sheet, make it penetrate into the gap of the solid sheet, and dry it in an oven for half an hour to obtain an ultra-broadband rand...

Embodiment 3

[0047] The chemical composition of the amorphous bismuth salt material of the present embodiment is Bi 2 o 3 : 65mol%; B 2 o 3 : 20mol%; Ga 2 o 3 : 15mol%. Glass raw material selection of analytical pure Bi 2 o 3 , B 2 o 3 , Ga 2 o 3 . After mixing according to the mole percentage, put it in an alumina crucible, melt it at a certain temperature, pour the glass melt on a stainless steel plate, press it, anneal it for 2 hours near the glass transition temperature, and then ball mill the block material. The powder acts as a strong scatterer. The powder was dispersed in water to form a 15mg / mL suspension, and 0.2mL was spin-coated on a glass substrate (spin-coating speed: 6000rpm, spin-coating time: 30s). Mix 1mL of 0.3g / mL polyvinyl alcohol aqueous solution and 0.25mL of 10mM ethanol solution of Rhodamine 800 evenly, get 0.2mL and drop evenly on the above sample, and spin-coat to obtain a polyvinyl alcohol film containing Rhodamine 800 (spin coating Speed: 6000rpm, ...

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Abstract

The invention relates to an ultra-wideband random laser scattering material based on amorphous bismuthate, a laser device and preparation and application. The scattering material comprises the chemical compositions in following mole percents: 45-65% of Bi2O3, 20-35% of B2O3, and 0-20% of Ga2O3; the preparation method comprises the following steps: mixing required raw materials, melting at a high temperature, annealing the high-temperature melt near by the glass transition temperature after the compression molding, and then ball-milling a bulk material into powder, wherein the prepared powder can be used for constructing suspension, solid tablet, substrate spinning film and various construction capable of providing random laser resonant optical feedback; and the ultra-wideband random lasercan be observed in the wide spectrum range of 530-870nm by changing the variety of the gain medium and exciting by the laser in different wavelengths. The preparation method is simple and flexible inform, and can be well used for the optical communication, the digital storage, the energy conversion and other fields.

Description

technical field [0001] The invention relates to the technical field of laser devices, in particular to a controllable ultra-broadband random laser scattering material, a laser device and its preparation and application. Background technique [0002] In recent years, the study of random lasers has become a hot topic in the field of micro-nano lasers. There are many significant differences between random lasers and traditional lasers in terms of generation mechanism and luminescence characteristics. Random laser radiation originates from a disordered medium with optical activity, and provides optical feedback through multiple scattering of radiated light in the medium, thereby obtaining a large Gain, laser resonance can be achieved without an external resonator. Random laser has the characteristics of omnidirectional emission, and when the observation angle is different, the spectral line structure and emission intensity will also change, and the luminescence characteristics ...

Claims

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Application Information

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IPC IPC(8): H01S3/30
CPCH01S3/307
Inventor 孟宪赓刘阳
Owner QILU UNIV OF TECH
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