Regenerating method for Al/Al2O3 part of TD/DRM process of semiconductor 8-inch wafer film process

Abstract

The invention relates to a regenerating method for an Al / Al2O3 part of a TD / DRM process of a semiconductor 8-inch wafer film process. The method comprises the steps that dry ice particles are sprayedand cleaned to regenerate the surface of the part; local temperature difference change formed by thermal energy absorption of dry ice during a sublimation process is used to generate a 'shear stress'between a substrate and a cleaned object, and the cleaned object is quickly peeled off from the surface of the substrate; a Venturi nozzle can generate a carbon dioxide gas stream containing more dryice particles; ultrasonic assisted supercritical CO2 cleaning regenerates the inner surface, the chamber and the groove of the part; and supercritical CO2 easily penetrates into the micropores and thechamber or groove of the part to dissolve pollutants, so that the pollutants migrate fast in supercritical CO2 to achieve the purpose of cleaning. Ultrasonic assisting further improves the cleaning effect and efficiency. The regeneration time and cost are shortened. The regenerating method has the advantages of simple process, environmental protection, being pollution-free and good regeneration effect, does not damage the semiconductor part, and has no impact on the performance of the part.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing technology product regeneration, and relates to Al / Al in the TD / DRM process of semiconductor 8-inch wafer film manufacturing process 2 o 3 Parts regeneration method. Background technique [0002] In the semiconductor manufacturing process, an ultra-clean environment is required. Before installation and use of the semiconductor manufacturing equipment, especially the components of the chamber, pollutants such as particles and impurities on the surface need to be removed to meet the processing requirements. With the development of semiconductor technology, semiconductor devices are accelerating towards miniaturization, high density / high integration, and very small contaminants such as particles, metal impurities, and surface adsorbed chemical substances in semiconductor manufacturing sites have also become It is enough to affect the yield and reliability of semiconductor device...

AI Technical Summary

Problems solved by technology

To improve SCCO 2 In order to improve the cleaning effect and efficiency, some studies have introduced mechanical agitation, which can reduce the cleaning pressure and improve the cleaning effect, but mechanical agitation is likely to cause mechanical damage to semiconductor components and affect their performance.

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