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38results about How to "Small diffusivity" patented technology

SHPB device for acquiring half sinusoids at different loading rates and use method thereof

The invention belongs to the technical field of impact dynamics and discloses a SHPB device for acquiring half sinusoids at different loading rates and a use method thereof. The device comprises a pendulum bob support, a pendulum bob, a cross laser calibration bearing base, an entrance rod and a transmission rod. The top of the pendulum bob support is provided with a dial and a pointer. The pendulum bob comprises a bob bar and a bob head. The bob bar can drive the pointer to carry out circling motion around the axle. The impact end surfaces of the bob head are cambered surfaces and have different curvature radiuses. One side of the pendulum bob support is provided with the cross laser calibration bearing base. The cross laser calibration bearing base is provided with the entrance rod and the transmission rod moving along the axial direction. The entrance rod and the transmission rod are respectively provided with strain gages. The strain gages are connected to an oscilloscope recorder, an exchanger and a computer through a signal preamplifier. The device can acquire half-sine incident stress wave having small dispersivity and good repeatability at different incident stress wave time and different loading rates and improve test accuracy.
Owner:NORTHEASTERN UNIV LIAONING

Body sample angiographic filler and preparation method thereof

InactiveCN104497485ASmall particlesStrong fluidity and diffusionChromium sesquioxidePhenols
The invention relates to an angiography technology and an anatomy and casting technology of a body sample and specifically discloses a body sample angiographic filler and a preparation method thereof. The filler consists of E-51 epoxy resin, 2,4,6-tri(dimethylamino methyl) phenol (DMP-30), polypropylene glycol diglycidyl ether (D-1217), a T-31 epoxy resin curing agent and a metal oxide powder contrast agent (zinc oxide, titanium dioxide, cuprous oxide and chromium sesquioxide). The angiographic filler disclosed by the invention is simple to prepare, easy to regulate in concentration and color and hard to decolorize, and has the characteristics of being rapid in automatic coagulation, small in percentage of contraction, high in toughness, low in cost and the like. CT reconstruction of blood vessel images of a human body sample or an animal body sample (or organ) have the advantages of being clear, full, continuous, free of fake shadows and burrs and the like.
Owner:黄海龙

Transistor and formation method thereof

The invention provides a transistor and a formation method thereof. The formation method of the transistor comprises: providing a semiconductor substrate, wherein the surface of the semiconductor substrate is provided with a plurality of separating layers, openings are formed between neighboring separating layers, the bottoms of the openings are provided with threshold voltage adjusting layers, and the threshold voltage adjusting layers are internally provided with doped ions; forming barrier layers on the surfaces of the threshold voltage adjusting layers and channel layers on the surfaces of the barrier layers, wherein the channel layers are at intrinsic states, and the barrier layers are used for preventing penetration by the doped ions in the threshold voltage adjusting layers; forming grid structures on the surfaces of the channel layers, wherein the surfaces of the grid structures are flush with the surfaces of the separating layers; removing the separating layers until the semiconductor substrate is exposed; and after the separating layers are removed, forming a doping layer on the surface of the semiconductor substrate at the two sides of the threshold voltage adjusting layers, the separating layers, the channels layers and the grid structures, wherein the surface of the doping layer is not lower than the surfaces of the channel layers. The formed transistor is lower in power consumption and stable in performance.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Regenerating method for Al/Al2O3 part of TD/DRM process of semiconductor 8-inch wafer film process

The invention relates to a regenerating method for an Al / Al2O3 part of a TD / DRM process of a semiconductor 8-inch wafer film process. The method comprises the steps that dry ice particles are sprayedand cleaned to regenerate the surface of the part; local temperature difference change formed by thermal energy absorption of dry ice during a sublimation process is used to generate a 'shear stress'between a substrate and a cleaned object, and the cleaned object is quickly peeled off from the surface of the substrate; a Venturi nozzle can generate a carbon dioxide gas stream containing more dryice particles; ultrasonic assisted supercritical CO2 cleaning regenerates the inner surface, the chamber and the groove of the part; and supercritical CO2 easily penetrates into the micropores and thechamber or groove of the part to dissolve pollutants, so that the pollutants migrate fast in supercritical CO2 to achieve the purpose of cleaning. Ultrasonic assisting further improves the cleaning effect and efficiency. The regeneration time and cost are shortened. The regenerating method has the advantages of simple process, environmental protection, being pollution-free and good regeneration effect, does not damage the semiconductor part, and has no impact on the performance of the part.
Owner:苏州珮凯科技有限公司

PVC baking varnish adhesive tape for metal baking varnish vehicle and preparation method of PVC baking varnish adhesive tape

The invention discloses a PVC baking varnish adhesive tape for a metal baking varnish vehicle. The adhesive tape comprises an original film and glue, the glue is arranged at the bottom of the original film, the glue and the original film are bonded, the area of the bottom surface of the original film is matched with the area of the glue, and the thickness of the original film is greater than that of the glue. By adding a proper amount of antioxidant into the glue and the original film of the adhesive tape, the service life of the adhesive tape can be prolonged, the adhesive tape can be prevented from being oxidized and corroded, the stability of the original film of the adhesive tape can be enhanced by utilizing a liquid barium-zinc stabilizer and a powdery stone powder stabilizer in the original film, meanwhile, the heat resistance of the PVC stoving varnish adhesive tape is also enhanced, the adhesive tape can be used in a high-temperature environment, and the applicability of the adhesive tape is enhanced. Terpene resin, hydrogenated resin and liquid phenolic resin are added, the unwinding force of the adhesive tape can be improved, meanwhile, the diffusivity of glue is reduced, and after the adhesive tape is torn off from an external object, the residual glue on the object is less, and the adhesive tape is convenient to clean.
Owner:万洲胶粘制品(江苏)有限公司

al/al of td/drm process for semiconductor 8-inch wafer thin film process 2 o 3 Regeneration method of parts

The invention relates to a regenerating method for an Al / Al2O3 part of a TD / DRM process of a semiconductor 8-inch wafer film process. The method comprises the steps that dry ice particles are sprayedand cleaned to regenerate the surface of the part; local temperature difference change formed by thermal energy absorption of dry ice during a sublimation process is used to generate a 'shear stress'between a substrate and a cleaned object, and the cleaned object is quickly peeled off from the surface of the substrate; a Venturi nozzle can generate a carbon dioxide gas stream containing more dryice particles; ultrasonic assisted supercritical CO2 cleaning regenerates the inner surface, the chamber and the groove of the part; and supercritical CO2 easily penetrates into the micropores and thechamber or groove of the part to dissolve pollutants, so that the pollutants migrate fast in supercritical CO2 to achieve the purpose of cleaning. Ultrasonic assisting further improves the cleaning effect and efficiency. The regeneration time and cost are shortened. The regenerating method has the advantages of simple process, environmental protection, being pollution-free and good regeneration effect, does not damage the semiconductor part, and has no impact on the performance of the part.
Owner:苏州珮凯科技有限公司

Energy plant ecological interception, purification and restoration system and method for copper-cadmium heavy metal polluted site

ActiveCN114798714AGive full play to the normal ecologyFully functionalContaminated soil reclamationFood chainSoil heavy metals
The invention discloses a copper-cadmium heavy metal polluted site energy plant ecological intercepting, purifying and repairing system which comprises an isolation wall body arranged on the periphery of a polluted site in a surrounding mode, a plurality of liquid passivator filling modules distributed in the polluted site and energy plants planted on the polluted site. The liquid passivator filling module is used for uniformly adding a liquid passivator into the soil of the polluted site, the energy plants are planted in the soil of the polluted site and are cultivated and managed, and after the energy plants grow to the mature period, the overground parts of the energy plants are harvested or the energy plants are integrally removed from the polluted soil. The invention further discloses a working method of the system. Normal ecological and economic functions of the polluted land are brought into full play, high-valued utilization of the heavy metal polluted land is achieved, energy plants are vigorously developed through the heavy metal polluted land, soil heavy metal pollution can be effectively remedied, the way that heavy metal enters a food chain can be cut off, and food safety is guaranteed.
Owner:HUBEI POLYTECHNIC UNIV +2

Transistors and methods of forming them

The invention provides a transistor and a formation method thereof. The formation method of the transistor comprises: providing a semiconductor substrate, wherein the surface of the semiconductor substrate is provided with a plurality of separating layers, openings are formed between neighboring separating layers, the bottoms of the openings are provided with threshold voltage adjusting layers, and the threshold voltage adjusting layers are internally provided with doped ions; forming barrier layers on the surfaces of the threshold voltage adjusting layers and channel layers on the surfaces of the barrier layers, wherein the channel layers are at intrinsic states, and the barrier layers are used for preventing penetration by the doped ions in the threshold voltage adjusting layers; forming grid structures on the surfaces of the channel layers, wherein the surfaces of the grid structures are flush with the surfaces of the separating layers; removing the separating layers until the semiconductor substrate is exposed; and after the separating layers are removed, forming a doping layer on the surface of the semiconductor substrate at the two sides of the threshold voltage adjusting layers, the separating layers, the channels layers and the grid structures, wherein the surface of the doping layer is not lower than the surfaces of the channel layers. The formed transistor is lower in power consumption and stable in performance.
Owner:SEMICON MFG INT (SHANGHAI) CORP

A reverberatory furnace for sacrificial anode production

The invention discloses a reverberatory furnace for sacrificial anode production, which belongs to the field of reverberatory furnaces. A reverberatory furnace for sacrificial anode production includes a protective reverberatory furnace. The left end of the protective reverberatory furnace is fixed with a diversion control gas plate through expansion bolts, which can The gas filled in the protective reverberatory furnace is restrained and guided by the telescopic diversion arc to reduce its diffusivity so that it can be fully utilized by the combustion flame and reduce its contact with the metal material on the lower side of the protective reverberatory furnace The probability of metal materials being oxidized reduces the probability of metal materials being oxidized, thereby effectively suppressing the generation of flue gas while reducing the oxidation loss of metal materials, reducing the waste of metal materials, and reducing the production cost of sacrificial anodes, thus improving its performance. Economic benefits, and the self-regulation of the restraint ability of the telescopic drainage arc through the gas self-temperature adjustment system reduces the difficulty of controlling process parameters and improves the production efficiency of the protective reverberatory furnace.
Owner:南通海门鑫瑞船舶配件有限公司
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