Copper electroplating solution applied to dry etching method copper interconnection Damascus and copper electroplating method thereof

Abstract

The invention discloses an electro-coppering solution applied to dry etching method copper interconnection Damascus and an electro-coppering method thereof. The electro-coppering solution comprises the following components by mass concentration: 5-20g / L of copper salt; 30-90 mg / L of a composite conductive agent; 10 to 15 mg / L of an accelerator; 1-8 g / L of a complexing agent; 20 to 60 mg / L of a surfactant; 15-45 mg / L of a compound stabilizer; and 0.1-0.5 g / L of a reducing agent. According to the solution, the phenomenon that the performance of a device is damaged due to atomic diffusion between copper and silicon is avoided; according to the scheme, the chlorine-free accelerator is used, damage to a base material is avoided, and electroplating can be achieved under the normal-temperature condition; and the step of depositing the conductive copper in advance is not needed, so that the technological process is shortened.

Description

technical field [0001] The invention relates to the technical field of copper electroplating, in particular to a copper electroplating solution and a copper electroplating method applied to copper interconnection Damascus by a dry etching method. Background technique [0002] The damascene technology is Damascus technology, which is to etch the pattern film for metal wires on the dielectric layer first, and then fill it with metal. The main feature of the damascene technology is that it does not need to etch the metal layer. When the material of the metal wire is changed from aluminum to copper with lower resistivity, because the dry etching of copper is more difficult, the damascene technology is very important for the copper process. The Damascene damascene technology using Cu-CMP is currently the only mature and copper patterning processes that have been successfully used in IC manufacturing. At the 0.1μm process stage, 90% of semiconductor production lines will use cop...

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Problems solved by technology

[0003] When the copper interconnect becomes smaller, the tantalum nitride dielectric layer is relatively thick, because it is very difficult to reduce the size of the lining to be thinner than 1 nanometer. Chen Xueli et al. proposed in the patent CN113106506A to solve the problem of copper by electroplating cobalt. Electromigration problem, but this method currently needs the market to evaluate the reliability, which is risky

[0004] In addition, Yao Yu and others proposed in the patent CN113388869A that the use of component glyoxylic acid in the formula of electroplating copper will cause redox with copper to cause copper instability, because disodium EDTA is not enough to stabilize copper ions at a temperature of 70 degrees Celsius. In addition The pH of the solution is 12-13, which will damage both the silicon layer and the dielectric layer

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