Vertical power diode with gradient-constituent drift-layers and fabrication method of vertical power diode

A technology of power diodes and drift layers, which is applied in the field of microelectronics, can solve the problems of device on-resistance and output current deterioration, uneven distribution of device electric field strength, and weaken the electric field strength of the drift layer, so as to avoid output current reduction and reverse The effect of effectively increasing the breakdown voltage and avoiding the increase of on-resistance

Active Publication Date: 2018-09-28
XIDIAN UNIV
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] After years of theoretical and experimental research, the researchers found that the above-mentioned traditional GaN-based vertical power diode structure has inherent defects, which will lead to extremely uneven electric field intensity distribution in the device, and there is a very high electric field peak near the anode in the upper part of the drift layer. , and the closer to the cathode in the drift layer, the smaller the electric field, causing premature breakdown of the device
In addition, in the traditional GaN-based vertical power diode, even if the field plate technology is used, the electric field intensity near the anode in the drift layer is only weakened to a certain extent, while the elect

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vertical power diode with gradient-constituent drift-layers and fabrication method of vertical power diode
  • Vertical power diode with gradient-constituent drift-layers and fabrication method of vertical power diode
  • Vertical power diode with gradient-constituent drift-layers and fabrication method of vertical power diode

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0062] Embodiment 1: Fabrication of a graded composition drift layer vertical power diode with drift layer number m being 1.

[0063] Step 1. Make a P-type polarization drift layer.

[0064] 1.1) Make the first P-type drift layer, such as image 3 a.

[0065] Using n + Use metal organic chemical vapor deposition technology to epitaxial AlGaN semiconductor material on a GaN substrate to form a thickness T 1 The first P-type drift layer is 1.0 μm, the Al composition on the lower surface is 0, and the Al composition on the upper surface is 0.15, and the Al composition increases linearly from the lower surface to the upper surface of the layer;

[0066] The process conditions of metal organic chemical vapor deposition technology are: temperature is 980℃, pressure is 45 Torr, hydrogen flow is 4400sccm, ammonia flow is 4400sccm, gallium source flow is 35μmol / min, aluminum source flow is linearly increasing from 5μmol / min to 10mol / min;

[0067] 1.2) Etch the first P-type drift layer, such as ...

Example Embodiment

[0079] Embodiment 2: Fabrication of a graded composition drift layer vertical power diode with drift layer number m being 2.

[0080] The first step. Make a P-type polarization drift layer.

[0081] 1a) Make the first P-type drift layer, such as image 3 a.

[0082] Using n + Use metal organic chemical vapor deposition technology to epitaxial AlGaN semiconductor material on a GaN substrate to form a thickness T 1 The first P-type drift layer is 1.0 μm, the Al composition on the lower surface is 0, and the Al composition on the upper surface is 0.1, and the Al composition increases linearly from the lower surface to the upper surface of the layer;

[0083] The process conditions of metal organic chemical vapor deposition technology are as follows: temperature is 980℃, pressure is 45 Torr, hydrogen flow is 4000 sccm, ammonia flow is 4000 sccm, gallium source flow is 35 μmol / min, and aluminum source flow increases linearly from 5 μmol / min to 7mol / min;

[0084] 1b) Make a second P-type dri...

Example Embodiment

[0101] Embodiment 3: Fabrication of a graded composition drift layer vertical power diode with a drift layer number m of 3.

[0102] Step A. Fabrication of P-type polarization drift layer.

[0103] A1) Make the first P-type drift layer, such as image 3 a.

[0104] Using n + The metal-organic chemical vapor deposition technology is used on the GaN substrate at a temperature of 980°C, a pressure of 40 Torr, a hydrogen flow rate of 3800 sccm, an ammonia flow rate of 3800 sccm, a gallium source flow rate of 30 μmol / min, and an aluminum source flow rate of 5 μmol / min. Under the process conditions of linearly increasing to 7mol / min, epitaxial AlGaN semiconductor material to form a thickness T 1 The first P-type drift layer is 2.0 μm, the Al composition on the lower surface is 0, and the Al composition on the upper surface is 0.1, and the Al composition increases linearly from the lower surface to the upper surface of the layer;

[0105] A2) Make a second P-type drift layer, such as image ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Widthaaaaaaaaaa
Login to view more

Abstract

The invention discloses a vertical power diode with gradient-constituent drift-layers, and mainly solves the problem that high breakdown voltage and low conduction resistance of a traditional verticalpower device cannot be simultaneously achieved. The gradient-constituent drift-layer vertical power diode comprises a substrate (1), a P-type polarization drift layer (2) and an N-type polarization drift layer (3), wherein a positive electrode (4) is deposited on the P-type polarization drift layer (2) and the N-type polarization drift layer (3), a negative electrode (5) is deposited at a lower part of the substrate, the P-type polarization drift layer comprises m layers of AlGaN semiconductor materials of which Al constituents are linearly increased from bottom to top, the P-type polarization drift layer is arranged at a left side of an upper part of the substrate, the N-type polarization drift layer comprises m layers of AlGaN semiconductor layers of which Al constituents are linearly reduced from bottom to top, and the N-type polarization drift layer is arranged at a right side of the upper part of the substrate. By the vertical power diode, high breakdown voltage and low conduction resistance can be simultaneously achieved, and the vertical power diode can be used for a power electronic system.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, in particular to a vertical power diode, which can be used in power electronic systems. technical background [0002] At present, the world's energy and environmental problems have become increasingly prominent, and have become an important obstacle restricting the sustainable development of mankind. The research and development of high-performance, low-loss power semiconductor devices is one of the effective ways to improve the utilization rate of electric energy, save energy, and alleviate the energy crisis. With the development of microelectronics technology, the performance of traditional first-generation Si semiconductor and second-generation GaAs semiconductor power devices is close to the theoretical limit determined by the material itself, and the wide bandgap semiconductor material represented by GaN has a larger forbidden Band width, higher critical breakdown electric field an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/06H01L29/861H01L21/329
CPCH01L29/0634H01L29/0684H01L29/66121H01L29/8613H01L29/2003H01L29/205H01L29/66212H01L29/872
Inventor 毛维丛冠宇彭紫玲张进成郝跃
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap