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A kind of ultraviolet detector and its manufacturing method

A technology of ultraviolet detector and manufacturing method, which is applied in the field of ultraviolet detection, can solve the problems that it cannot be used as an ultraviolet detector, and achieve the effects of improving sensitivity, increasing width, and increasing concentration

Active Publication Date: 2020-04-03
NINGBO SEMICON INT CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Conventional semiconductor materials, such as silicon, have a band gap of 1.12eV and can absorb infrared-visible-ultraviolet spectra, so they cannot be used as ultraviolet detectors

Method used

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  • A kind of ultraviolet detector and its manufacturing method
  • A kind of ultraviolet detector and its manufacturing method
  • A kind of ultraviolet detector and its manufacturing method

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Experimental program
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Effect test

Embodiment 1

[0057] In order to obtain an ultraviolet detector with higher performance, the present invention provides an ultraviolet detector structure, which mainly includes:

[0058] Substrate;

[0059] The first ohmic contact electrode, formed on the substrate, includes a bottom ohmic contact electrode layer, and several raised structures disposed on the bottom ohmic contact electrode layer;

[0060] The stacked n-type ZnO layer, i-type ZnO layer and p-type ZnO layer are arranged on the surface of the bottom ohmic contact electrode layer and the surface of the raised structure, wherein the i-type ZnO layer is located on the n between the p-type ZnO layer and the p-type ZnO layer;

[0061] The second ohmic contact electrode is formed on a partial surface of the stacked n-type ZnO layer, i-type ZnO layer, and p-type ZnO layer.

[0062] The first ohmic contact electrode in the ultraviolet detector of the present invention is formed on the substrate, including a bottom ohmic contact elec...

Embodiment 2

[0102] The present invention also provides a method for manufacturing the ultraviolet detector in the foregoing embodiment one, such as Figure 5 As shown, it mainly includes the following steps:

[0103] Step S1, providing a substrate;

[0104] Step S2, forming a first ohmic contact electrode on the substrate, wherein the first ohmic contact electrode includes a bottom ohmic contact electrode layer, and several protrusion structures arranged on the bottom ohmic contact electrode layer ;

[0105] Step S3, forming a stack of n-type ZnO layer, i-type ZnO layer and p-type ZnO layer to cover the surface of the bottom ohmic contact electrode layer and the surface of the raised structure, wherein the i-type ZnO layer is located Between the n-type ZnO layer and the p-type ZnO layer;

[0106] Step S4, forming a second ohmic contact electrode to cover part of the top surfaces of the stacked n-type ZnO layer, i-type ZnO layer and p-type ZnO layer.

[0107] Below, refer to Fig. Fig...

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Abstract

The invention provides an ultraviolet detector and a manufacturing method thereof. The ultraviolet detector comprises the components of a substrate; a first ohmic contact electrode which is formed onthe substrate and comprises a bottom ohmic contact electrode layer a plurality of projection structures which are arranged on the bottom ohmic contact electrode layer; an n-type ZnO layer, an i-type ZnO layer and a p-type ZnO layer, wherein the n-type ZnO layer, th i-type ZnO lyer and the p-type ZnO layer are laminated, the layers are arranged on the surface of the bottom ohmic contact electrode layer and the surface of the projection structures, and the i-type ZnO layer between the n-type ZnO layer and the p-type ZnO layer; and a second ohmic contact electrode which is formed on partial surfaces of the laminated n-type ZnO layer, the i-type ZnO layer and the p-type ZnO layer. The ultraviolet detector has advantages of enlarging contact area with ultraviolet ray, improving ultraviolet rayabsorption by the laminated n-type ZnO layer, the i-type ZnO layer and the p-type ZnO layer, improving concentration of photon-generated carriers and improving sensitivity of the ultraviolet detector.

Description

technical field [0001] The invention relates to the technical field of ultraviolet detection, in particular to an ultraviolet detector and a manufacturing method thereof. Background technique [0002] The ultraviolet detector is based on the semiconductor photoelectric effect. When ultraviolet light is incident on the semiconductor, electrons in the valence band absorb photon energy and jump to the conduction band to participate in conduction. Conventional semiconductor materials, such as silicon, have a band gap of 1.12eV and can absorb infrared-visible-ultraviolet spectra, so they cannot be used as ultraviolet detectors. The commonly used structure is metal semiconductor Schottky, PN junction, PIN junction and other structures with a depletion layer. When photogenerated carriers are generated in the depletion layer, under the action of the built-in electric field, photogenerated electrons and holes They are collected by two electrodes respectively, thereby generating an e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/105H01L31/18
CPCH01L31/105H01L31/1828Y02P70/50
Inventor 陈达罗海龙叶菲
Owner NINGBO SEMICON INT CORP
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