Distributed Bragg reflector applied into vertical-cavity surface-emitting laser

Abstract

The invention discloses a distributed Bragg reflector applied into a vertical-cavity surface-emitting laser. A novel binary digital alloy GaAs / AIAs semiconductor superlattice distributed Bragg reflector (DBR) is formed by employing a binary digital alloy GaAs / AIAs superlattice material as a high-refraction material layer. In the DBR with the structure, the constituent transition layer of a heterojunction interface is omitted due to the introduction of the binary digital alloy GaAs / AIAs superlattice material, the structural design of the device is simplified, so that a growth parameter during the epitaxial growth process is easier to control; and meanwhile, the thickness of the superlattice layer and the de broglie wavelength of an electron are at the same order of magnitude, a tunneling current of a carrier formed by a tunneling effect is increased, so that the DBR favorably acquires relatively lower series resistance.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a distributed Bragg reflector applied in a vertical cavity surface emitting laser. Background technique [0002] The thickness of the active region of a straight-cavity surface-emitting laser (VCSEL) is only a few nanometers, and the one-way gain is very low. In order to achieve lasing, distributed Bragg reflectors (Distributed Bragg Reflector, DBR) must be grown on the upper and lower sides of the active region. A typical DBR mirror structure is made by a quarter-wavelength thick high (such as Al with low Al composition x Ga 1-x As) and low refractive index (such as AlAs) films are alternately grown for dozens of cycles to obtain the expected high reflectivity of the design. In order to ensure that the DBR has a high reflectivity and a wide reflection bandwidth, the two materials constituting the fundamental period of the distributed Bragg reflector should have ...

AI Technical Summary

Problems solved by technology

But growing Al in molecular beam epitaxy (MBE) equipment x Ga 1-x During the As DBR process, dozens of cycles alternately grow Al x Ga 1-x For the As and composition graded layer, it is necessary to continuously change the temperature of the Al source furnace, which makes the growth process complicated and difficult to control the growth process, especially for the MBE growth system with only a single Al source furnace, the growth of this DBR mirror requires more Too much heating and cooling time of the Al source furnace, such a structural design is unfavorable to the industrialization of VCSEL

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