Manufacturing method of array substrate

Abstract

The invention provides a manufacturing method of an array substrate. According to the manufacturing method of the array substrate, the array substrate is manufactured by adopting four photomasks, anda storage capacitor is formed by an array substrate common electrode line, a passivation layer and a pixel electrode; only one passivation layer is contained between the upper electrode and the lowerelectrode of the storage capacitor, the size of the storage capacitor per unit area can be effectively increased, and the aperture ratio of pixels is increased; and meanwhile the storage capacitor structure does not contain a semiconductor layer, and therefore picture residues can be avoided.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a method for manufacturing an array substrate. Background technique [0002] With the development of display technology, liquid crystal displays (Liquid Crystal Display, LCD) and other flat display devices are widely used in mobile phones, televisions, personal Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become the mainstream of display devices. [0003] Usually, the liquid crystal display panel consists of a color filter substrate (CF, Color Filter), a thin film transistor substrate (TFT, ThinFilm Transistor), a liquid crystal (LC, Liquid Crystal) sandwiched between the color filter substrate and the thin film transistor substrate, and a sealant frame (Sealant ), the molding process generally includes: the front-end array (Array) process (film, yellow light, etching and stripping), the...

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Problems solved by technology

In the existing 4Mask technology, the storage capacitor in the pixel unit is generally a metal-insulator-semiconductor layer (MIS) structure, including the common electrode (Acom) wiring of the array substrate, and the gate insulating layer on the Acom wiring. , the active layer located on the gate insulating layer, and the drain metal layer located on the active layer, since the driving voltage of the liquid crystal display panel needs to be switched between positive and negative polarities during operation, to avoid liquid crystal Polarization, the storage capacitor of this MIS structure will cause the positive and negative polarity switching process of the liquid crystal display panel, the charge amount of the positive and negative cycles is different, which will lead to the phenomenon of image stick (IS) and affect the display quality; in addition , in the prior art, there is also a storage capacitor with a metal-insulator-insulator (MII) structure, this storage capacitor includes Acom wiring, a gate insulating layer on the Acom wiring, a gate insulating layer on the The passivation layer on the passivation layer and the pixel electrode layer on the passivation layer. Although the storage capacitor of this MII structure can avoid image residue, there are two insulating layers between the upper and lower plates of the capacitor, so the storage capacitor must be increased. The area of ​​the storage capacitor can maintain sufficient capacitance, but the increase in the area of ​​the storage capacitor will lead to a decrease in the aperture ratio of the pixel

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