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A kind of Ⅱ-type core-shell structure quantum dot and its preparation method and application

A technology of core-shell structure and quantum dots, which is applied in the field of sensitized solar cells, can solve problems such as the elimination of unfavorable holes, and achieve the effects of loose shell thickness, reduced difficulty, and excellent photoelectric conversion efficiency

Active Publication Date: 2019-11-29
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the shell is too thick, it will not be conducive to the elimination of holes when it is applied to quantum dot-sensitized solar cells.

Method used

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  • A kind of Ⅱ-type core-shell structure quantum dot and its preparation method and application
  • A kind of Ⅱ-type core-shell structure quantum dot and its preparation method and application
  • A kind of Ⅱ-type core-shell structure quantum dot and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] (1) Preparation of titanium dioxide dense layer:

[0055] TiO by screen printing 2 The slurry (P25) is evenly spread on the screen, and the material is scraped lightly and quickly with a scraper. Then place the conductive surface of the conductive glass directly under the screen plate, and quickly scrape TiO 2 The paste allows it to be printed onto conductive glass. TiO 2 The film was placed in a sealed box with a small amount of ethanol, and stood for 3 minutes. Under the atmosphere of ethanol vapor, the TiO 2 The film is naturally leveled, transferred to an oven, and dried at 125°C.

[0056] (2) Preparation of Cd by aqueous phase method 0.64 Zn 0.36 Te (feeding ratio Cd / Zn=1 / 1) quantum dots:

[0057] Sodium borohydride and tellurium powder are used as raw materials, deionized water is used as a solvent, and a transparent sodium telluride hydride solution is formed by reacting at 30°C for 2-3 hours in a nitrogen atmosphere. with CdCl 2 , ZnCl 2 As raw materia...

Embodiment 2

[0081] (1) Preparation of titanium dioxide dense layer:

[0082] TiO was screen-printed 2 The slurry (P25) is spread evenly on the wire mesh, and the material is applied lightly and quickly with a scraper. Then place the conductive surface of the conductive glass directly under the screen plate, and quickly scrape the TiO with force 2 The paste makes it print onto conductive glass. the TiO 2 The film was placed in a sealed box with a small amount of ethanol, and stood for 3 min. Under the atmosphere of ethanol vapor, the TiO 2 The film was naturally leveled, transferred to an oven, and dried at 125°C.

[0083] (2) Preparation of Cd by aqueous method 0.37 Zn 0.63 Te (feeding ratio Cd / Zn=1 / 3) quantum dots:

[0084] Using sodium borohydride and tellurium powder as raw materials and deionized water as solvent, in a nitrogen atmosphere, react at 30 °C for 2-3 hours to form a transparent sodium tellurium hydride solution. with CdCl 2 , ZnCl 2 As raw material, mercaptopropi...

Embodiment 3

[0092] (1) Preparation of titanium dioxide dense layer:

[0093] TiO was screen-printed 2 The slurry (P25) is spread evenly on the wire mesh, and the material is applied lightly and quickly with a scraper. Then place the conductive surface of the conductive glass directly under the screen plate, and quickly scrape the TiO with force 2 The paste makes it print onto conductive glass. the TiO 2 The film was placed in a sealed box with a small amount of ethanol, and stood for 3 min. Under the atmosphere of ethanol vapor, the TiO 2 The film was naturally leveled, transferred to an oven, and dried at 125°C.

[0094] (2) Preparation of Cd by aqueous method 0.14 Zn 0.86 Te (feeding ratio Cd / Zn=1 / 7) quantum dots:

[0095] Using sodium borohydride and tellurium powder as raw materials and deionized water as solvent, in a nitrogen atmosphere, react at 30 °C for 2-3 hours to form a transparent sodium tellurium hydride solution. with CdCl 2 , ZnCl 2 As raw material, mercaptopropi...

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Abstract

The invention discloses an II-type core-shell structure quantum dot and a preparation method thereof and an application in preparation of a quantum dot-sensitized photoelectrode. The II-type core-shell structure quantum dot comprises a shell layer and a core layer and the component is CdZnTe@CdS; and the molar ratio of an element Cd to an element Zn is (0.15-1.8):1. The invention discloses a novelcore-shell structure quantum dot, and an II-type core-shell structure is obtained under the low-thickness CdS shell layer. The light trapping capacity of the quantum dot-sensitized photoelectrode prepared by using the II-type core-shell structure quantum dot is significantly improved, the injection efficiency of photo-induced electrons is not affected and a quantum dot-sensitized solar cell prepared by using the quantum dot is expected to have more excellent photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to the technical field of sensitized solar cells, in particular to a II-type quantum dot, a preparation method thereof, and an application in the preparation of a quantum dot sensitized photoelectrode. Background technique [0002] Quantum dot sensitized solar cells are a research hotspot. The basic structure includes semiconductor photoelectrodes, quantum dot sensitizers, electrolytes, conductive glass, and counter electrodes. Among them, semiconductor photoelectrodes provide a pathway for electron transport and are also quantum dot sensitizers. attached carrier. But at present, compared with other types of solar cells, the photoelectric conversion efficiency of quantum dot-sensitized solar cells is relatively low. Quantum dot sensitizer is the main factor affecting the photoelectric conversion efficiency of quantum dot sensitized solar cells. An ideal quantum dot sensitizer should have a wide spectral response range, a high co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/20H01G9/042
CPCH01G9/2027Y02E10/542
Inventor 赵高凌卢王威占丰钱怡潇韩高荣
Owner ZHEJIANG UNIV
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