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Method used for transverse bridging splicing growth of large-area monocrystal diamond

A single crystal diamond, large-area technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of relative movement of diamonds and obvious splicing seams, and reduce the risk of cracks or even cracks. The splicing is firm and the effect of stress reduction

Pending Publication Date: 2018-10-19
西安德盟特半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for growing large-area single crystal diamond by horizontal bridge splicing, so as to solve the problem that the splicing seam is obvious during the splicing and growing process of diamond, and the diamond is prone to relative movement, thereby reducing the risk of cracks or even cracks at the splicing place risk

Method used

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  • Method used for transverse bridging splicing growth of large-area monocrystal diamond
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  • Method used for transverse bridging splicing growth of large-area monocrystal diamond

Examples

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Embodiment 1

[0042] A method for splicing and growing single crystal diamond comprises the steps:

[0043] 1) Select two (100) single crystal diamond substrates, the substrate size is 3×3×0.4mm 3 and 3×3×0.5mm 3 , using a standard acid-base cleaning process to clean the single crystal diamond on the substrate to remove the non-diamond phase on the surface, then clean the two single crystal diamonds with alcohol, acetone, and deionized water, and dry them with nitrogen.

[0044] 2) Splicing two single crystal diamond substrates in a microwave plasma cavity.

[0045] 3) Microwave plasma is used to epitaxy the substrate, and under certain conditions, a lateral bridging part is grown at the seam to realize firm splicing; a complete epitaxial single crystal diamond can be obtained by continuing to grow. The diamond was grown by plasma chemical deposition technology, and the growth conditions were: methane flow rate 100 sccm, growth temperature 800°C, chamber pressure 150 Torr, and total gas f...

Embodiment 2

[0047] A method for splicing and growing single crystal diamond comprises the steps:

[0048] 1) Select two (100) single crystal diamond substrates, the substrate size is 3×3×0.4mm 3 and 3×3×0.5mm 3 , using a standard acid-base cleaning process to clean the single crystal diamond on the substrate to remove the non-diamond phase on the surface, then clean the two single crystal diamonds with alcohol, acetone, and deionized water, and dry them with nitrogen.

[0049] 2) Splicing two single crystal diamond substrates in a microwave plasma cavity.

[0050] 3) Microwave plasma is used to epitaxy the substrate, and under certain conditions, a lateral bridging part is grown at the seam to realize firm splicing; a complete epitaxial single crystal diamond can be obtained by continuing to grow. The diamond was grown by plasma chemical deposition technology, and the growth conditions were: methane flow rate 200 sccm, growth temperature 800°C, chamber pressure 150 Torr, and total gas f...

Embodiment 3

[0052] A method for splicing and growing single crystal diamond comprises the steps:

[0053] 1) Select two (100) single crystal diamond substrates, the substrate size is 3×3×0.4mm 3 and 3×3×0.5mm 3 , using a standard acid-base cleaning process to clean the single crystal diamond on the substrate to remove the non-diamond phase on the surface, then clean the two single crystal diamonds with alcohol, acetone, and deionized water, and dry them with nitrogen.

[0054] 2) Splicing two single crystal diamond substrates in a microwave plasma cavity.

[0055] 3) Microwave plasma is used to epitaxy the substrate, and under certain conditions, a lateral bridging part is grown at the seam to realize firm splicing; a complete epitaxial single crystal diamond can be obtained by continuing to grow. The diamond is grown by plasma chemical deposition technology, and the growth conditions are as follows: methane flow rate 200 sccm, growth temperature 1300° C., chamber pressure 150 Torr, and...

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Abstract

The invention discloses a method used for transverse bridging splicing growth of large-area monocrystal diamond. According to the method, monocrystal diamond substrate I and monocrystal diamond substrate II are subjected to splicing, growth of a bridge-shaped connection part at the joint part is realized, and a complete large-area monocrystal diamond layer is obtained through continuous epitaxialgrowth; wherein the thickness of the monocrystal diamond substrate I at the joint part is lower than that of the monocrystal diamond substrate II at the joint part. The method is capable of solving problems in the prior art that the joint part is obvious, and diamond relative movement is easily caused in diamond splicing growth, and cracking risk at the joint part is reduced.

Description

【Technical field】 [0001] The invention belongs to the technical field of material growth, and in particular relates to a method for splicing and growing large-area single crystal diamond by lateral bridging. 【Background technique】 [0002] Single crystal diamond belongs to the third-generation wide bandgap semiconductor, which has many excellent properties, such as large bandgap width, high critical breakdown field strength, large hole and electron mobility, good light transmission, effective These excellent properties make single crystal diamond materials have great application potential in the fields of high-frequency, high-voltage, high-power electronics, radome fields, and MEMS fields. The premise of these applications is to grow high-quality large-size single-crystal diamond materials that meet the requirements, so it is necessary to study the growth of single-crystal diamond. At present, the growth technology of single crystal diamond material has made great progress....

Claims

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Application Information

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IPC IPC(8): C30B29/04C30B25/20
CPCC30B29/04C30B25/186C30B25/205
Inventor 王宏兴王艳丰常晓慧邵国庆魏孔庭张景文卜忍安侯洵
Owner 西安德盟特半导体科技有限公司
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