High-power semiconductor module suitable for balancing heat of internal power switch chip in short-circuit condition

A technology of power switch chips and power semiconductors, applied in semiconductor devices, circuits, electric solid devices, etc., can solve the problem that the temperature of parallel chips cannot be taken into account, and achieve the effects of simple structure, easy integration, and improved reliability.

Active Publication Date: 2018-10-19
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is affected by the response time of the voltage detection circuit, and at the same time, it cannot take into account the temperature between parallel chips, which has certain limitations.

Method used

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  • High-power semiconductor module suitable for balancing heat of internal power switch chip in short-circuit condition
  • High-power semiconductor module suitable for balancing heat of internal power switch chip in short-circuit condition
  • High-power semiconductor module suitable for balancing heat of internal power switch chip in short-circuit condition

Examples

Experimental program
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Effect test

Embodiment 1

[0028] Embodiment 1 uses a negative temperature coefficient thermistor as a heat equalization circuit under the condition of a short-circuit condition of an IGBT module connected in parallel with a chip of a thermal element, such as figure 2 shown, the thermistor R NTC It is connected in parallel with the G (gate) and E (emitter) terminals of the IGBT chip, and connected with the device gate drive resistor R g A heat balance control circuit for parallel chips is formed. R NTC It directly reflects the device temperature and has a negative temperature coefficient. In the case of an external short circuit, when the temperature of a chip in the parallel chip is too high, the R of the chip surface NTC As the temperature rises, the resistance decreases, the driving voltage applied to the IGBT decreases, the resistance between the emitter and the collector of the IGBT increases, and the current flowing through the IGBT chip decreases, making the thermal stress of the parallel chi...

Embodiment 2

[0029] Embodiment 2 A thermal equalization circuit of a SiC MOSFET power module using a thermistor as a thermal element under short-circuit conditions, such as image 3 shown, the thermistor R NTC It is connected in parallel with the G (gate) and E (emitter) terminals of the internal chip of the SiC MOSFET power module, and connected with the gate drive resistor R g Constitutes a current equalizing circuit. In the case of an external short circuit, when the temperature of a device in parallel is too high, the R next to the device NTCAs the temperature rises, the resistance value decreases, the gate drive voltage applied to the MOSFET decreases, and the resistance between the emitter and collector of the MOSFET increases, which reduces the current flowing through the MOSFET chip and makes the thermal stress of the parallel chip more balanced under short-circuit conditions.

[0030] In the above embodiment, a negative temperature coefficient thermistor is used as the thermal e...

Embodiment 3

[0041] Embodiment 3 uses a thermal switch as a heat equalization circuit under the short-circuit condition of the IGBT module parallel chip of the thermal element, such as Figure 5 shown, the thermal switch and resistor divider R p In series, then in parallel with the G (gate) and E (emitter) terminals of the IGBT chip, and the gate drive resistor R g A parallel chip current sharing control circuit is formed. The thermal switch is normally open at low temperature and closed when the temperature exceeds the threshold; under short-circuit conditions, when the temperature of the parallel chip exceeds the threshold, the thermal switch is closed, and the driving voltage is equal to the resistance R p For the above parallel voltage divider value, the voltage decreases and the on-resistance increases, thereby limiting the short-circuit current and sharing the current.

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PUM

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Abstract

The invention discloses a high-power semiconductor module suitable for balancing the heat of an internal power switch chip in a short-circuit condition. The high-power semiconductor module, accordingto a principle that the on-resistance of a power semiconductor device is controlled by gate voltage, adds an autonomous heat balance control circuit to each parallel device or each parallel chip in amodule, detects the temperature of the device by a temperature-sensitive element, and automatically adjusts the voltage applied to the gate of the device according to the parameters of the temperature-sensitive element, wherein the temperature-sensitive element can be a thermistor or voltage-regulator diode with a negative temperature coefficient. In the short-circuit condition, the temperature ofthe parallel chip rises, the thermistor achieves automatic feedback, the voltage applied to the gate of the chip decreases, the on-resistance of the device increases so as to automatically decrease the short-circuit current flowing through the chip. The passive heat balance control circuit of the invention is simple in structure and is easy to be integrated into a device driving board or high-power module, so that the parallel devices are thermally balanced, thereby improving the reliability of the power device.

Description

technical field [0001] The invention belongs to the technical field of power electronics, and in particular relates to a high-power semiconductor module suitable for soaking internal power switch chips under short-circuit conditions. Background technique [0002] Power semiconductor devices are widely used in high-power applications, and their reliable and safe operation has received more and more attention; due to the limited capacity of a single device, high-power applications usually use multiple internal chips packaged in parallel. , play the role of current expansion. In the case of using a large-capacity power module, the internal and external working environments of the parallel chips cannot be completely consistent, resulting in uneven heating of the parallel chips; especially in extreme short-circuit conditions, the chip temperature rises sharply, and the reliability of the entire module depends on on the hottest chips. Therefore, it is of great significance to se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02
CPCH01L27/0288
Inventor 李武华李成敏陈宏罗皓泽何湘宁
Owner ZHEJIANG UNIV
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