Method for improving mis-hemt ohmic contacts of group III nitrides and mis-hemt devices
A MIS-HEMT, ohmic contact technology, applied in MIS-HEMT devices, improves the field of III nitride MIS-HEMT ohmic contact, can solve the problems of difficult to obtain stable and reliable ohmic contact, large performance differences, etc. Large-scale production, relaxed process requirements, and the effect of lowering potential barriers
Active Publication Date: 2020-05-19
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology
However, the performance of devices made by these existing technologies varies greatly, and it is difficult to obtain stable and reliable ohmic contact conditions.
Method used
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[0021] In view of the deficiencies in the prior art, the inventor of this case was able to propose the technical solution of the present invention after long-term research and extensive practice. The technical solution, its implementation process and principle will be further explained as follows.
[0022] An aspect of the embodiments of the present invention provides a method for improving the ohmic contact of a III-nitride MIS-HEMT, including:
[0023] A heterostructure mainly composed of a second semiconductor and a third semiconductor is provided, the third semiconductor is distributed on the second semiconductor and has a band gap wider than that of the second semiconductor, and a two-dimensional structure is formed in the heterostructure. electronic gas;
[0024] Overlaying a dielectric layer on the third semiconductor, and processing the dielectric layer to expose the third semiconductor corresponding to the source and drain regions of the heterostructure;
[0025] Th...
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Abstract
The invention discloses a method for improving the ohmic contact of Group III nitride MIS-HEMT and a MIS-HEMT device. The method includes: providing a heterostructure mainly composed of a second semiconductor and a third semiconductor, the third semiconductor being distributed on the second semiconductor, and a two-dimensional electron gas is formed in the heterostructure; A dielectric layer is overlaid on the third semiconductor, and the dielectric layer is processed to expose the third semiconductor corresponding to the source and drain regions of the heterostructure; Thinning treatment to at least balance the resistance of the two-dimensional electron gas and the resistance of the barrier layer; treating the surface of the exposed portion of the third semiconductor to increase the surface roughness of the exposed portion of the third semiconductor; A source and a drain connected to the heterostructure are formed on the exposed part of the third semiconductor, and a gate connected to the heterostructure is formed on the dielectric layer, and the gate is distributed between the source and the heterostructure. between the drains.
Description
technical field [0001] The invention relates to a MIS-HEMT device, in particular to a method for improving the ohmic contact of a group III nitride MIS-HEMT (metal-insulator semiconductor high electron mobility transistor) and the MIS-HEMT device, belonging to the field of microelectronic technology. Background technique [0002] The wide bandgap semiconductor GaN has the characteristics of large bandgap width, high breakdown field strength, high thermal conductivity, and high electron saturation drift velocity. It has great potential in the field of high temperature and microwave power device manufacturing. Among them, GaN / AlGaN HEMT (high-electron-mobility transistor) devices have obvious advantages in microwave high-power and high-temperature applications, and have become one of the current research hotspots. [0003] GaN / AlGaN HEMT materials have strong piezoelectric and spontaneous polarization effects, and can form high electron mobility and high density two-dimensiona...
Claims
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IPC IPC(8): H01L21/335H01L21/285H01L29/778
CPCH01L21/28575H01L29/66462H01L29/7786
Inventor 李夏珺张宝顺蔡勇于国浩付凯张志利孙世闯宋亮
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI