Partial P-type GaN cap layer RESURF GaN-based schottky barrier diode
A Schottky potential and diode technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems affecting the forward turn-on voltage and reverse withstand voltage of the device, difficult performance indicators, low diffusion coefficient, etc., reaching the critical The effect of high breakdown electric field, excellent transient characteristics, and stable chemical properties
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[0038] See figure 1 , figure 1 A schematic structural diagram of a partial P-type GaN cap layer RESURF GaN-based Schottky barrier diode provided for an embodiment of the present invention, including: a substrate layer 201, a buffer layer 202 on the substrate layer 201, and the buffer layer 202 The channel layer 203 on the channel layer 203, the barrier layer 204 on the channel layer 203, the cathode and the composite anode at both ends of the barrier layer 204, the part P connected to the composite anode and located on the barrier layer type GaN cap layer 206, covering the barrier layer 204, the part of the P-type GaN cap layer 206, the composite anode, and the passivation layer 211 on the cathode, wherein the channel layer 203 and the The barrier layer 204 forms a heterojunction, the P-type GaN cap layer forms a PN junction with the barrier layer, the cathode is a cathode ohmic contact 207, and the composite anode includes an anode ohmic contact 208 and an anode Schottky Co...
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