Photovoltaic cell with high energy conversion efficiency and long service life
A photovoltaic cell and ultraviolet light technology, which is applied in the field of solar cells, can solve the problems of reducing the life of perovskite solar cells and other problems, and achieve the effects of being beneficial to collection, excellent in electrical conductivity and simple in preparation method.
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Embodiment 1
[0039] A perovskite photovoltaic cell based on an ultraviolet light shielding layer, including an ITO conductive glass substrate, an ultraviolet light shielding layer, a hole transport layer, a perovskite light absorbing layer, an electron transport layer and a reflective electrode. Cell preparation was carried out as follows.
[0040] (1) ITO conductive glass substrate cleaning:
[0041] An ITO glass substrate (available on the market) is provided, etched into a desired pattern and cut, ultrasonically cleaned with acetone, isopropanol, and deionized water for 20 minutes, dried with nitrogen, and then irradiated with ultraviolet light for 20 minutes before use.
[0042] (2) Prepare the UV shielding layer on the ITO conductive glass substrate:
[0043]Put the above-mentioned ITO conductive glass substrate into a vacuum coating machine, evacuate until the vacuum degree is less than 5×10-4Pa, start to prepare the ultraviolet light shielding layer, set the number of m-MTDATA / F16C...
Embodiment 2
[0054] A perovskite photovoltaic cell based on an ultraviolet light shielding layer, including an ITO conductive glass substrate, an ultraviolet light shielding layer, a hole transport layer, a perovskite light absorbing layer, an electron transport layer and a reflective electrode. Cell preparation was carried out as follows.
[0055] (1) ITO conductive glass substrate cleaning:
[0056] Same as embodiment one.
[0057] (2) Prepare the UV shielding layer on the ITO conductive glass substrate:
[0058] Put the above-mentioned ITO conductive glass substrate into a vacuum coating machine, evacuate until the vacuum degree is less than 5×10-4Pa, start to prepare the ultraviolet light shielding layer, set the number of m-MTDATA / F16CuPc heterojunction N=10, and deposit 5nm first Deposit 5nm of m-MTDATA on the F16CuPc, as a unit, continue to deposit 5nm of F16CuPc, and then deposit 5nm of m-MTDATA, as the second unit... Deposit 10 times in total, and obtain 10 m-MTDATA5nm / UV shie...
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