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Preparation method of atomic crystal boron-doped carbon material

A carbon material and boron doping technology, applied in chemical instruments and methods, nano-carbon, carbon compounds, etc., can solve problems such as carbon structural defects, inability to ensure uniform distribution of boron atoms, limited introduction methods, etc., to achieve less defects, boron The effect of adjustable content and high surface activity

Active Publication Date: 2018-11-20
北京墨烯科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the limited introduction of boron, boron atoms are mainly added to the precursor by adding boron sources (such as boric acid, boron-containing organic substances, etc.), which cannot ensure the uniform distribution of boron atoms in the carbon structure; and the boron source contains Oxygen components, still cause defects in the carbon structure

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  • Preparation method of atomic crystal boron-doped carbon material
  • Preparation method of atomic crystal boron-doped carbon material
  • Preparation method of atomic crystal boron-doped carbon material

Examples

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Embodiment 1

[0027] A method for preparing an atomic crystal boron-doped carbon material, comprising the steps of:

[0028] (1) Boron is introduced into the graphite crucible: first, 25% amorphous boron powder, 35% coal-based pitch, and 40% coke powder are kneaded, and the kneading temperature is 150 ° C. The kneaded material is cooled to room temperature, and then crushed to 90 μm , and then placed in the mold for steel molding, and then carbonized and pre-graphitized, the highest temperature is lower than 1800°C. Finally, the boron-containing graphite block is processed into a screw-sealable crucible;

[0029] (2) Fill the carbon dots in a boron-containing graphite crucible, seal the thread and place it in the constant temperature zone of the intermediate frequency graphitization furnace. Under the protection of high-purity argon, keep the constant pressure at 0.04MPa, and then pump the high-purity argon into it. The gas is circulated twice to ensure that all the air is discharged; then...

Embodiment 2

[0031] A method for preparing an atomic crystal boron-doped carbon material, comprising the steps of:

[0032] (1) Boron is introduced into the graphite crucible. The specific process is: first knead 10% nano-boron powder, 35% coal-based pitch, and 55% coke powder at a temperature of 160°C, cool the kneaded material to room temperature, then crush it to 120 μm, and then place it in the mold Molded, then carbonized and pre-graphitized, the maximum temperature is lower than 2000 °C. Finally, the boron-containing graphite block is processed into a screw-sealable crucible;

[0033](2) Fill the graphene in the boron-containing graphite crucible, seal the thread and place it in the constant temperature zone of the intermediate frequency graphitization furnace. Under the protection of high-purity argon, keep the constant pressure at 0.1MPa, and then pump the high-purity argon into it. The gas is circulated twice to ensure that all the air is discharged; then the temperature is rais...

Embodiment 3

[0035] A method for preparing an atomic crystal boron-doped carbon material, comprising the steps of:

[0036] (1) Boron is introduced into the graphite crucible. The specific process is: first knead 20% boron carbide, 35% coal-based pitch, and 45% coke powder at a temperature of 170°C, cool the kneaded material to room temperature, then crush it to 150 μm, and then place it in a mold for isostatic pressing Forming, then carbonization and pre-graphitization, the maximum temperature is lower than 1900 °C. Finally, the boron-containing graphite block is processed into a screw-sealable crucible;

[0037] (2) Fill the carbon nanotubes in the boron-containing graphite crucible, seal the thread and place it in the constant temperature zone of the intermediate frequency graphitization furnace. The argon gas is circulated twice to ensure that all the air is discharged; then the temperature is raised to 2200°C at 5°C / min, and the temperature is kept constant for 1.0h. After the const...

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Abstract

The invention discloses a preparation method of an atomic crystal boron-doped carbon material. The preparation method comprises the following steps: firstly filling a boron-containing graphite crucible with a carbon material, sealing with threads, then putting the boron-containing graphite crucible in a constant-temperature zone of a graphitization furnace, increasing the temperature to 2000-3000DEG C, then maintaining the constant temperature for 0.5-3 hours and reducing to a room temperature to prepare the boron-doped carbon material. According to the invention, a gas phase boron doping method is utilized, and the boron-doped carbon material is prepared by gas-solid reaction. The boron-doped carbon material prepared by the preparation method disclosed by the invention has the characteristics of being uniform in boron distribution, adjustable in boron content, high in surface activity, few in defect, high in electrical conductivity and the like and has potential applications in the fields of electrode material conductive agents, active substances and other batteries.

Description

technical field [0001] The invention belongs to the technical field of carbon material preparation, and relates to a method for preparing a boron-doped carbon material, in particular to a method for preparing a boron-doped carbon material using a high-temperature gas phase. Background technique [0002] Carbon materials play an extremely important role in today's science and technology. With the discovery of new carbon structures such as fullerenes, carbon nanotubes, and graphene, carbon materials have a wide range of potential applications in fields such as field emission displays, transistors, electrochemical energy storage devices, and structural composite materials. Because carbon materials are mostly prepared by chemical methods and heat treatment methods, there are many defects in the carbon structure, and its electrical conductivity and structural order are far from the ideal value, making carbon materials used in energy storage devices and structural composite materi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/532C04B35/622C01B32/15C01B32/21C01B32/194C01B32/168H01M4/62
CPCC01P2002/01C01P2002/72C01P2004/03C04B35/522C04B35/532C04B35/622C04B2235/421C01B32/15C01B32/168C01B32/194C01B32/21H01M4/624H01M4/625Y02E60/10
Inventor 王慧奇李莹安铎曹红红李宁胡胜亮常青王延忠
Owner 北京墨烯科技有限公司
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