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A kind of flexible nerve electrode and the implantation method of flexible nerve electrode

A flexible and neural technology, applied in the field of nerve electrodes, can solve problems such as acute damage to brain tissue, electrode failure, and reduce tissue immune response, achieving long-term stable measurement and reducing acute damage

Active Publication Date: 2022-03-22
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, silicon-based rigid nerve electrodes are the most widely used. Silicon-based nerve electrodes have high spatial-temporal resolution and can record the action potential of a single neuron. However, the mechanical properties of silicon-based nerve electrodes have a large Differences, it is easy to produce micro-movement in the brain tissue, causing a large immune response, and a large number of glial cells will be generated around the electrode, causing the electrode to fail
[0004] In response to the above problems, people have developed flexible nerve electrodes, whose mechanical properties are more compatible with the cerebral cortex, which greatly reduces the tissue immune response. However, the current flexible nerve electrodes generally need to be solidified by curing agents or implanted into the cerebral cortex with the aid of rigid objects. Acute damage to brain tissue

Method used

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  • A kind of flexible nerve electrode and the implantation method of flexible nerve electrode
  • A kind of flexible nerve electrode and the implantation method of flexible nerve electrode
  • A kind of flexible nerve electrode and the implantation method of flexible nerve electrode

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preparation example Construction

[0076] Step 11, preparation of the sacrificial layer (the material of the sacrificial layer is Al)

[0077] 1) Silicon wafer cleaning: place a silicon wafer with a diameter of 4 inches in a clean petri dish, ultrasonically clean it with acetone, isopropanol and water for 10 minutes (power 30W), blow dry with nitrogen, and place the silicon wafer on a 105°C hot plate Heat it up for 3 minutes to remove water vapor, and then clean it with oxygen plasma for 3 minutes after the temperature drops to room temperature (power 100W).

[0078] 2) Coating: place the clean silicon wafer in the center of the suction cup of the coating machine and fix it, set the parameters of the coating machine (500rpm 5splus 2000rpm 60s), drop 4mL of S1813 photoresist in the center of the silicon wafer with a dropper, and start coating .

[0079] 3) Pre-baking: Place the silicon wafers that have been uniformly glued on a hot plate at 115°C, bake for 3 minutes, and then take them down to room temperature....

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Abstract

The invention discloses a flexible nerve electrode and an implantation method of the flexible nerve electrode. The flexible neural electrode includes a flexible substrate, a flexible insulating layer, and a conductive layer and a magnetic material layer between the flexible substrate and the flexible insulating layer; wherein the conductive layer includes at least one conductive wire, and the conductive wire includes interconnecting wires and respectively The recording sites and welding points located at both ends of the interconnection wire; the magnetic material layer includes a plurality of magnetic material parts, and the magnetic material part corresponds to the first part of the interconnection wire; at least one through hole is formed on the flexible insulating layer, and the through hole is connected to the first part of the interconnection wire. The recording sites are in one-to-one correspondence, and the through holes penetrate the flexible insulating layer to expose the corresponding recording sites. In the technical solution provided by the embodiments of the present invention, the flexible nerve electrode is magnetic and can be implanted into the cerebral cortex under the traction of the magnetic field force, so that the implantation of the flexible nerve electrode will not cause major acute damage to the brain tissue.

Description

technical field [0001] The embodiments of the present invention relate to the field of nerve electrodes, in particular to a flexible nerve electrode and a method for implanting the flexible nerve electrode. Background technique [0002] Nerve electrodes are a hot issue in neuroscience research. They are bridges connecting neurons with external electronic devices. Through nerve electrodes, we can measure the electrophysiological signals of the cerebral cortex, including local field potentials and action potentials. This is important for brain science. It is of great significance for the development of brain diseases and the diagnosis of brain diseases, such as epilepsy, Parkinson's and Alzheimer's diseases. A nerve electrode with excellent performance needs to meet the following two conditions: first, the implantation damage is small, and the rejection reaction of the brain tissue to the electrode is reduced; second, it can have a high temporal and spatial resolution for the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): A61N1/05
CPCA61N1/0526A61N1/0531
Inventor 方英郜磊王晋芬管寿梁杜明德
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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