Pulse neuron circuit based on tunneling field effect transistor
A tunneling field effect and neuron technology, applied in the direction of pulse technology, logic circuit, biological neural network model, etc., can solve the problems of low hardware overhead, achieve low hardware overhead, reduce short-circuit energy consumption, and save hardware overhead
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[0013] Below in conjunction with the accompanying drawings, the present invention will be further described through specific embodiments.
[0014] like figure 1 As shown, this embodiment implements a pulse neuron circuit based on a tunneling field effect transistor under a silicon-based CMOS compatible process, including a capacitor C mem , leak and reset tube M 1 , positive feedback tube M 2 , two-stage series inverter M 3 -M 6 ; Among them, the capacitance C mem It is used to simulate the cell membrane capacitance of biological neurons, accumulating the charge brought by the input post-synaptic current (PSC), and its two ends are respectively connected to the input terminal V of the first-stage inverter mem with a fixed resting voltage V rest , this fixed resting voltage V rest Slightly higher than GND but less than the logic threshold level of the first stage inverter; leakage and reset transistor M 1 It is an N-type SiTFET device that provides a leakage and reset p...
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