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Method for preparing porous carbide membrane

A carbide film and oxide technology, applied in the field of preparation of porous carbide film, can solve the problem of high melting point of carbide

Inactive Publication Date: 2018-12-07
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the carbide film is mostly prepared by carbide sintering, but because the carbide has a high melting point, it usually requires a heat treatment temperature above 2000 °C.

Method used

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Examples

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preparation example Construction

[0020] The invention provides a kind of preparation method of porous carbide membrane, comprises the following steps:

[0021] (1) Mixing oxide micropowder, binding agent and water to obtain a mixture;

[0022] (2) molding the mixture to obtain an oxide support green body;

[0023] (3) Sintering the oxide support green body to obtain a homogeneous oxide film;

[0024] (4) Carbothermal reduction reaction is performed on the homogeneous oxide film to obtain a porous carbide film.

[0025] The present invention mixes oxide fine powder, binder and water to obtain a mixture. From the chemical composition, the oxide powder of the present invention is preferably niobium oxide, tantalum oxide, titanium oxide or silicon oxide; the binder is preferably carboxymethyl cellulose, sodium carboxymethyl cellulose, starch, tar, Emulsified bitumen or phenolic resin. The particle size of the oxide fine powder in the present invention is preferably 0.005-20 μm, more preferably 0.1-15 μm; most...

Embodiment 1

[0035] Mix 50g of niobium oxide powder with a particle size of 200nm and 1.5g of carboxymethyl cellulose, add an appropriate amount of water to mix, mold into shape, dry, raise the temperature to 800°C at a heating rate of 5°C per minute, and keep it warm for 2 hours to obtain Niobium oxide homogeneous film. Place the niobium oxide homogeneous film in a tube furnace, raise the temperature to 1200°C at a rate of 2°C per minute in a mixed atmosphere of argon and methane containing 10% methane, keep it warm for 8 hours, and cool to room temperature to obtain an average pore size of 0.8 μm niobium carbide film.

Embodiment 2

[0037] Mix 50g of tantalum oxide powder with a particle size of 800nm ​​and 1.5g of carboxymethyl cellulose, add an appropriate amount of water to mix, mold into shape, dry, heat up to 1000°C at a heating rate of 8°C per minute, and keep it warm for 3 hours to obtain Tantalum oxide homogeneous film. Put the tantalum oxide homogeneous film in a tube furnace, raise the temperature to 1300°C at a rate of 4°C per minute in a mixed atmosphere of argon and methane containing 15% methane, keep it warm for 8 hours, and cool to room temperature to obtain an average pore size of 2.2 μm tantalum carbide film.

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Abstract

The invention provides a method for preparing a porous carbide membrane, and belongs to the technical field of porous inorganic membranes. The method comprises the following steps: mixing oxide micropowder, adhesive and water to obtain mixture; molding the mixture to obtain an oxide support biscuit; sintering the oxide support biscuit to obtain an oxide homogenous membrane; and performing a carbonthermal reduction reaction on the oxide homogenous membrane to obtain the porous carbide membrane. According to the method, the oxide homogenous membrane is sintered after an oxide support biscuit isprepared and is transformed into a carbide membrane, high-temperature thermal treatment brought be directly sintering carbide can be avoided since the sintering temperature for transforming the oxidemembrane into a carbide membrane is relatively low, and the thermal treatment temperature for preparing the porous carbide membrane can be reduced in comparison with the carbide membrane prepared bydirectly sintering carbide in the prior art.

Description

technical field [0001] The invention relates to the technical field of porous inorganic membranes, in particular to a preparation method of porous carbide membranes. Background technique [0002] Carbide film has good resistance to chemical cleaning and wear resistance, and has broad application prospects in the fields of food, medicine, and chemical industry. At present, the carbide film is mostly prepared by carbide sintering, but because the melting point of carbide is relatively high, a heat treatment temperature above 2000°C is usually required. For example, Ji-Xuan Liu et al. (Journal of the americananceramic society[J], 2010[93], 370-373.) used TaC powder as a precursor to prepare TaC ceramics at a sintering temperature of 2300°C. Contents of the invention [0003] The object of the present invention is to provide a method for preparing a porous carbide film, which can reduce the heat treatment temperature for preparing the porous carbide film. [0004] In order t...

Claims

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Application Information

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IPC IPC(8): C04B35/56C04B35/622C04B35/636C04B38/00
CPCC04B35/5607C04B35/5611C04B35/62218C04B35/6365C04B38/0054C04B2235/652C04B2235/6562
Inventor 秦国彤马晶江雷
Owner BEIHANG UNIV
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