A light-emitting diode epitaxial wafer and its manufacturing method

A technology of light-emitting diodes and manufacturing methods, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of low luminous efficiency of LEDs, and achieve the effect of improving luminous efficiency and increasing the number of carriers

Active Publication Date: 2020-04-14
HC SEMITEK ZHEJIANG CO LTD
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  • Abstract
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  • Claims
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Problems solved by technology

[0005] Embodiments of the present invention provide a light-emitting diode epitaxial wafer and a manufacturing method thereof, which can solve the problem of low luminous efficiency of LEDs in the prior art

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  • A light-emitting diode epitaxial wafer and its manufacturing method
  • A light-emitting diode epitaxial wafer and its manufacturing method
  • A light-emitting diode epitaxial wafer and its manufacturing method

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Embodiment Construction

[0028] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings.

[0029] The embodiment of the present invention provides a light emitting diode epitaxial wafer, figure 1 This is a schematic diagram of the structure of a light-emitting diode epitaxial wafer provided by an embodiment of the present invention, see figure 1 The light emitting diode epitaxial wafer includes a substrate 10, an N-type semiconductor layer 20, an active layer 30, a first carrier blocking layer 40, and a P-type semiconductor layer 50. The N-type semiconductor layer 20, the active layer 30, and the first The carrier blocking layer 40 and the P-type semiconductor layer 50 are sequentially stacked on the substrate 10, and the material of the first carrier blocking layer 40 is P-type doped aluminum gallium nitride.

[0030] In this embodim...

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Abstract

The invention discloses a light emitting diode epitaxial wafer and a manufacturing method thereof, belonging to the field of semiconductor technology. A light emit diode epitaxial wafer include a substrate, an N-type semiconductor layer, a second carrier blocking layer, an active layer, a first carrier blocking layer and a P-type semiconductor layer, an N-type semiconductor layer, a second carrierblocking layer, an active layer, a first carrier blocking layer and a P-type semiconductor layer are sequentially laminated on the substrate, and the material of the first carrier blocking layer is P-type doped aluminum gallium nitride; The material of the second carrier barrier layer is N-type doped aluminum gallium nitride; The doping concentration of aluminum in the second carrier barrier layer gradually increases along the stacking direction of the LED epitaxial wafer, and the doping concentration of aluminum in the first carrier barrier layer gradually decreases along the stacking direction of the LED epitaxial wafer. The doping concentration of aluminum in the second carrier barrier layer gradually increases along the stacking direction of the LED epitaxial wafer. The invention maximizes the number of carriers in the active layer as much as possible, promotes the radiation recombination luminescence of the carriers, and improves the luminescence efficiency of the LED.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a light emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, abbreviated as: LED) is a semiconductor diode that can convert electrical energy into light energy. LED has the advantages of high efficiency, energy saving, green and environmental protection, and has a wide range of applications in the fields of traffic indication, outdoor full-color display and so on. In particular, the use of high-power LEDs to achieve semiconductor solid-state lighting is expected to become a new generation of light sources into millions of households, causing a revolution in the history of human lighting. [0003] The epitaxial wafer is the primary finished product made by LED, which is formed by growing a semiconductor film on a single crystal material with matching crystal structure. For ex...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14H01L33/00
CPCH01L33/005H01L33/14
Inventor 胡任浩丁杰周飚胡加辉李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
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