A method for industrially preparing a copper oxide in a hole transport layer of a perovskite solar cell
A technology of hole transport layer and copper oxide, which is applied in the field of solar cells, can solve the problem of unfavorable preparation of large-area and uniform thin films, restrictions on the industrialization of perovskite thin-film cells, and the high cost of preparation materials for perovskite solar cells. problem, achieve the effect of reducing battery cost and being suitable for large-scale application promotion
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Embodiment 1
[0038] Sputtering power 75W, process vacuum 5mTorr, O 2 :N 2 =2:6sccm, the thickness of copper oxide is 50nm, the deposition rate is 5nm / min, and the photoelectric conversion efficiency of the solar cell is 5.6%.
Embodiment 2
[0040] Sputtering power 50W, process vacuum 10mTorr, O 2 :N 2 =1:4sccm, the thickness of copper oxide is 150nm, the deposition rate is 3.5nm / min, and the photoelectric conversion efficiency of the solar cell is 10.2%.
Embodiment 3
[0042] Sputtering power: 20W, process vacuum 3mTorr, O 2 :N 2 =0.5:2sccm, the thickness of the copper oxide layer is 75nm, the deposition rate is 3nm / min, the photoelectric conversion efficiency of the solar cell is 15.7%, the main battery parameters are the open circuit voltage Voc is 1.04V, and the short circuit current density Jsc is 19.84mA / cm 2 , the fill factor FF is 75.87% (such as image 3 Shown, which is the solar cell I-V curve prepared using the optimal process conditions).
[0043] The photoelectric conversion efficiency of the perovskite solar cell prepared by controlling the above parameters is as high as 15.7%. Although the photoelectric conversion efficiency is slightly lower than the existing perovskite solar small-area cells, its cost is greatly reduced, and industrialization can be realized.
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