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A kind of cmos thin film transistor and its manufacturing method

A technology of thin-film transistors and manufacturing methods, which is applied in the display field, can solve problems such as affecting the electrical properties of TFT elements and reducing the concentration of boron ions, and achieve the effects of improving product quality, improving electrical properties, and good compactness

Active Publication Date: 2021-03-05
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since boron ions are smaller, they are easier to diffuse and migrate, specifically as figure 1 as shown, figure 1 It is the distribution curve of boron ions in the heat treatment process of the prior art, so that the concentration of boron ions in the implanted channel will decrease, which will affect the electrical performance of TFT elements

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  • A kind of cmos thin film transistor and its manufacturing method
  • A kind of cmos thin film transistor and its manufacturing method
  • A kind of cmos thin film transistor and its manufacturing method

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Embodiment Construction

[0013] In order to make the purpose, technical solution and effect of the present application more clear and definite, the present application will be further described in detail below with reference to the accompanying drawings and examples.

[0014] The application provides a CMOS thin film transistor, the polysilicon layer of the CMOS thin film transistor is provided with a layer of amorphous carbon film layer, the amorphous carbon film layer is a dense layer, has better compactness, and can block the penetration of dopant ions , Confine the doping ions to the polysilicon layer, thereby improving the outgassing phenomenon of doping ions after high-temperature annealing of LTPS TFT components after ion implantation, improving the accuracy of ion implantation, improving the electrical performance of TFT components, and improving product quality.

[0015] see figure 2 , figure 2 It is a schematic structural diagram of the first embodiment of the CMOS thin film transistor of...

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Abstract

The application discloses a CMOS thin film transistor and a manufacturing method thereof. The thin film transistor comprises: a substrate, a polysilicon layer formed on the substrate, and an amorphous carbon film layer formed on the polysilicon layer, wherein the amorphous carbon film layer is Dense layer to block the penetration of dopant ions. Through the above method, the present application can improve the electrical performance of the TFT element and improve the product quality.

Description

technical field [0001] The present application relates to the field of display technology, in particular to a CMOS thin film transistor and a manufacturing method thereof. Background technique [0002] Thin-Film Transistor (TFT) technology can be divided into polysilicon (Poly-Si) technology and amorphous silicon (a-Si) technology, the difference between the two lies in the characteristics of transistors. Compared with traditional A-Si technology, Low Temperature Poly-Silicon (LTPS) technology is widely used in small and medium-sized high-resolution TFT LCDs and Fabrication of AMOLED panels. According to its production method, LTPS is mainly divided into N-type metal oxide semiconductor (Negative channel Metal Oxide Semiconductor, NMOS), P-type metal oxide semiconductor (Positive channel MetalOxide Semiconductor, PMOS) and complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor). , CMOS), where the main difference between NMOS transistors and PMOS ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/77H01L21/8238
CPCH01L27/1214H01L27/1259H01L27/1288
Inventor 肖东辉
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD