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Surface-modification method for hexagonal boron nitride

A technology of hexagonal boron nitride and surface modification, used in organic chemistry, preparation of amino compounds from amines, etc., can solve problems such as harsh modification conditions, low grafting rate, and insignificant improvement in neutron absorption performance, achieving The effect of improving the dispersibility and improving the interaction force

Inactive Publication Date: 2019-01-04
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although these methods have achieved the improvement of its different functions by grafting the surface of hexagonal boron nitride to varying degrees, their grafting rate is low (less than 10%), the modification conditions are harsh, and the reaction cycle is long. The shortcomings of the neutron absorption performance improvement is not obvious

Method used

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  • Surface-modification method for hexagonal boron nitride
  • Surface-modification method for hexagonal boron nitride
  • Surface-modification method for hexagonal boron nitride

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] (1) Weigh 2.8g of sodium hydroxide and 2.2g of potassium hydroxide, add 1g of hexagonal boron nitride nanosheets, grind them into fine powder in a mortar, and mix well. The mixed powder was reacted in a crucible at 180° C. for 3 h, and cooled to room temperature. The mixed powder treated by the solid phase method was dispersed in a certain amount of water, the mixed solution was treated with an ultrasonic cell pulverizer for 2 hours, and then the supernatant was removed by centrifugation. Washing with distilled water 3 times until the pH of the solution is neutral to obtain pre-hydroxylated hexagonal boron nitride.

[0062] (2) In an ice bath, dissolve 5.4 g of p-phenylenediamine in 4 mL of 98% concentrated sulfuric acid and 32 mL of deionized water, and stir until the p-phenylenediamine is completely dissolved. Add 30% sodium nitrite solution dropwise from the liquid surface to the above solution to prepare the corresponding sulfated diazonium salt solution.

[0063]...

Embodiment 2

[0065] (1) Weigh 2.8g of sodium hydroxide and 2.2g of potassium hydroxide, add 1g of hexagonal boron nitride nanosheets, grind them into fine powder in a mortar, and mix well. Transfer the mixed powder into a 100mL hydrothermal reaction kettle, add 70mL of pure water, react at 180°C for 6h, cool to room temperature, use an ultrasonic cell pulverizer to treat the mixture for 2h, and then centrifuge to remove the supernatant, the lower layer Washing with distilled water for 3 times until the pH of the solution is neutral to obtain pre-hydroxylated hexagonal boron nitride.

[0066] (2) In an ice bath, dissolve 5.4 g of p-phenylenediamine in 4 mL of 98% concentrated sulfuric acid and 32 mL of deionized water, and stir until the p-phenylenediamine is completely dissolved. Add 30% sodium nitrite solution dropwise from the liquid surface to the above solution to prepare the corresponding sulfated diazonium salt solution.

[0067] (3) Disperse the pre-hydroxylated hexagonal boron nit...

Embodiment 3

[0069] (1) Weigh 2.8g of sodium hydroxide and 2.2g of potassium hydroxide, add 1g of hexagonal boron nitride nanosheets, grind them into fine powder in a mortar, and mix well. First react the mixed powder in a crucible at 180°C for 3h, then transfer the mixed powder into a 100mL hydrothermal reaction kettle, add 70mL of pure water, and react at 180°C for 6h. After cooling to room temperature, the mixture was treated with an ultrasonic cell disruptor for 2 hours, and then the supernatant was removed by centrifugation, and the lower layer was washed with distilled water three times until the pH of the solution was neutral to obtain pre-hydroxylated hexagonal boron nitride.

[0070] (2) In an ice bath, dissolve 5.4 g of p-phenylenediamine in 4 mL of 98% concentrated sulfuric acid and 32 mL of deionized water, and stir until the p-phenylenediamine is completely dissolved. Add 30% sodium nitrite solution dropwise from the liquid surface to the above solution to prepare the correspo...

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Abstract

The invention provides a surface-modification method for hexagonal boron nitride serving as an absorbent of a neutron absorbing material. The surface-modification method includes the following steps that (1) the hexagonal boron nitride and a strong-base compound are reacted; (2) pre-hydroxylated hexagonal boron nitride and substitutive phenyl-acidification diazonium salt are reacted in an acid solution, and the surface-modification hexagonal boron nitride composition is obtained; the formula of the substitutive phenyl-acidification diazonium salt is defined in the description, wherein R is selected from NH2, HO, HSO3, halogen and alkyl, R1 is hydrogen or alkyl or alkoxy, and X is an acid-radical ion.

Description

technical field [0001] The invention relates to a method for surface modification of inorganic materials, in particular to a method for surface modification of hexagonal boron nitride. Background technique [0002] With the progress of nuclear energy development, traditional radiation protection materials can no longer meet the protection requirements of my country's nuclear power industry, such as the traditional radiation protection material - lead, which is highly toxic and has poor neutron shielding effect. Lead-containing concrete Disadvantages such as bulky and difficult to move. Therefore, in order to meet the resulting challenges, it has become an important aspect of material research and development to develop new radiation-proof materials that are non-toxic, low-density, good shielding effect, and excellent physical properties. At present, there are many kinds of absorbers used in neutron absorbing materials, among which hexagonal boron nitride is 10 B isotope has...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07C209/68C07C211/45C08K9/02C08K3/38
CPCC07C209/68C07C211/45C08K3/38C08K7/00C08K9/02C08K9/04C08K2003/385C08K2201/011C08L77/02
Inventor 李化毅王竹君李倩郑水蓉胡友良
Owner INST OF CHEM CHINESE ACAD OF SCI
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