Quantum dot color film filter based on micro-nano porous structure

A color filter film, porous structure technology, applied in the direction of filter, optics, nonlinear optics, etc., can solve the problems of reduced conversion efficiency, aggravated quantum dot self-absorption, reduced backlight conversion efficiency, etc., to achieve good compatibility, Thin and light industrialization, improve the capture effect

Active Publication Date: 2019-01-04
FUZHOU UNIV
View PDF10 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] When the backlight provided by the backlight module is incident on the quantum dot color filter, the quantum dots in the quantum dot color filter emit light of the corresponding color under the excitation of the backlight, but the absorption of the backlight by the quantum dots is not sufficient; increase the color Filter film is a strategy, but the increase in thickness will aggravate the self-absorption of quantum dots, which will reduce the conversion efficiency
The current quantum dot color filter needs to add a layer of filter on the upper surface to filter the unabsorbed backlight, which obviously reduces the conversion efficiency of the backlight

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] 1) Add red, green, and blue ZnSe / ZnS core-shell quantum dots (with a size of 6 nm to 11 nm) with oleylamine oleic acid ligands into octane, shake until uniformly dispersed, and obtain 2wt% quantum dot solution, filtered for later use;

[0021] 2) Fabricate a black matrix on a porous PI film with a thickness of 3000 nm and a pore size of 600-1000 nm;

[0022] 3) Print the prepared quantum dot solution in the specified black matrix gap, and package and protect it to obtain a color filter film;

[0023] 4) Combine color filter film with UV LED backlight.

Embodiment 2

[0025] 1) Add red and green ZnSe / ZnS core-shell quantum dots (with a size of 6 nm to 11 nm) with oleylamine oleic acid ligands into octane, shake until uniformly dispersed, and obtain 2wt% quantum dots Point the solution and filter it for later use;

[0026] 2) Fabricate a black matrix on a porous PI film with a thickness of 3000 nm and a pore size of 600-1000 nm;

[0027] 3) Print the prepared quantum dot solution in the specified black matrix gap, and package and protect it to obtain a color filter film;

[0028] 4) Combine color filter film with blue LED backlight.

Embodiment 3

[0030] 1) Add red and green ZnSe / ZnS core-shell quantum dots (with a size of 6 nm to 11 nm) with oleylamine oleic acid ligands into octane, shake until uniformly dispersed, and obtain 2wt% quantum dots Point the solution and filter it for later use;

[0031] 2) Fabricate a black matrix on a porous inorganic silica film with a thickness of 3000 nm and a pore size of 600-1000 nm;

[0032] 3) Print the prepared quantum dot solution in the specified black matrix gap, and package and protect it to obtain a color filter film;

[0033] 4) Combine color filter film with blue LED backlight.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
sizeaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The present invention discloses a quantum dot color film filter based on a micro-nano porous structure. The quantum dot color film filter is made by uniformly distributing quantum dots in a hole of amicro-nano porous structure carrier, wherein the aperture size of the micro-nano porous structure carrier is 20-1000nm, the quantum dots are one and more than one of the group of quantum dots with a nanometer ball shape, a nanometer bar shape, a nanometer disc shape and a nanometer ellipsoid shape, the sizes of the quantum dots are 2-2000nm, and are smaller than half of the aperture size of the micro-nano porous structure carrier. The micro-nano porous structure is utilized to simply and effectively improve the capture and the absorption for the backlight with no need for increasing the thickness of the material filter coating and the self absorption of the quantum dots. The color film filter can regulate the aperture size and the distribution of the porous structure and the particle diameters and the morphology of the quantum dots, has good compatibility, and facilitates large-scale, flexible and thin color film filter industrialization.

Description

technical field [0001] The invention belongs to the technical field of photoelectric display devices, and in particular relates to a quantum dot color filter film based on a micro-nano porous structure. Background technique [0002] Color filters, or color conversion films, have important applications in liquid crystal displays (LCDs), surface-backlit organic light-emitting devices (OLEDs), and micro LED colorization. However, traditional color filters use pigmented photoresists to absorb light of other wavelengths, thereby emitting light of the desired color. In this way, for a white backlight, about 2 / 3 of the light in the backlight is absorbed by the filter, and the light utilization rate is greatly reduced. At the same time, the transmission peak is wide and the color gamut is low, which is difficult to meet the user's requirements for display quality. [0003] Quantum dots (Quantum dots, QDs), also known as semiconductor nanocrystals, are approximately spherical in sha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/20G02F1/13357G02F1/1335
CPCG02B5/20G02F1/133514G02F1/1336G02F1/133614
Inventor 李福山刘洋胡海龙马福民徐中炜郭太良
Owner FUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap