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Display backplane, manufacturing method thereof, and display device

A display backplane and display device technology, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., can solve the problem of separation of characteristics of driving thin film transistors and switching thin film transistors

Active Publication Date: 2020-11-03
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the embodiments of the present invention is to provide a display backplane, its preparation method, and a display device, so as to overcome the problem of separation of the characteristics of the driving thin film transistor and the switching thin film transistor in the existing OLED display device

Method used

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  • Display backplane, manufacturing method thereof, and display device
  • Display backplane, manufacturing method thereof, and display device
  • Display backplane, manufacturing method thereof, and display device

Examples

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no. 1 example

[0066] figure 1 It is a schematic structural diagram of the first embodiment of the display backplane according to the present invention, only illustrating the driving thin film transistor and the switching thin film transistor. Such as figure 1 As shown, the main structure of the top gate bottom emission structure OLED display backplane in this embodiment includes a transparent heat conduction layer formed on the substrate, a shielding layer formed on the transparent heat conduction layer, a top gate type first thin film transistor and a second thin film transistor. The transparent thermal conduction layer includes a transparent conductive layer and a first buffer layer, the first thin film transistor is used as a driving thin film transistor (DRTFT), and the second thin film transistor is used as a switching thin film transistor (SW TFT). Specifically, the present embodiment shows that the backplane includes: a transparent conductive layer 30 and a first buffer layer 50 se...

no. 2 example

[0079] Figure 8 A schematic structural diagram of the second embodiment of the backplane is shown in the present invention. This embodiment is an extension of the aforementioned first embodiment. The main structure of the top-gate bottom-emission structure OLED display backplane includes a transparent heat conduction layer formed on the substrate, a shielding layer formed on the transparent heat conduction layer, and a top-gate type first a thin film transistor and a second thin film transistor. Different from the aforementioned first embodiment, the transparent heat conduction layer of this embodiment includes a transparent semiconductor layer 40 and a first buffer layer 50, such as Figure 8 shown.

[0080] In this embodiment, the material of the transparent semiconductor layer can be metal oxide or silicon material, and the metal oxide can include a metal oxide semiconductor formed by one or more metal elements such as indium (In) or gallium (Ga), such as Indium Gallium...

no. 3 example

[0083] Figure 9 A schematic structural diagram of the third embodiment of the backplane is shown for the present invention. This embodiment is an extension of the aforementioned first and second embodiments. The main structure of the top-gate bottom-emitting structure OLED display backplane includes a transparent heat conduction layer formed on the substrate, a shielding layer formed on the transparent heat conduction layer, and a top-gate type. The first thin film transistor and the second thin film transistor. Different from the aforementioned first and second embodiments, the transparent heat conduction layer in this embodiment includes a transparent conductive layer 30, a transparent semiconductor layer 40 and a first buffer layer 50, such as Figure 9 shown.

[0084] In this embodiment, the material of the transparent conductive layer can be indium tin oxide ITO or indium zinc oxide IZO, the material of the transparent semiconductor layer can be metal oxide or silicon ...

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Abstract

Embodiments of the present invention provide a display backplane, a manufacturing method thereof, and a display device. The display backplane includes: a base, a transparent heat conduction layer disposed on the base, and an array structure layer disposed on the heat conduction layer; the array structure layer includes a light-shielding layer, a first thin film transistor, and a second thin film transistor, so The light-shielding layer is arranged between the transparent thermal conduction layer and the first thin film transistor. The transparent heat conduction layer includes a transparent conductive layer, a transparent semiconductor layer, or a transparent conductive layer and a transparent semiconductor layer. The present invention can effectively solve the problem of separation of characteristics of the driving thin film transistor and the switching thin film transistor existing in the existing OLED display device by disposing the transparent heat conduction layer between the base and the array structure layer.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a display backplane, a preparation method thereof, and a display device. Background technique [0002] Thin Film Transistor (TFT) is a very important element in the field of display technology, and plays a very important role in Liquid Crystal Display (LCD) and Organic Light Emitting Diode (OLED). At present, there are two main types of thin film transistors: bottom gate thin film transistors and top gate thin film transistors. Since there is no overlapping area between the gate electrode and the source-drain electrode in the top-gate thin film transistor, it has a small parasitic capacitance, and the small parasitic capacitance reduces the delay of the RC circuit, so it has a higher switching speed and is easy Enable higher resolution displays. At the same time, the number of patterning processes required to prepare the top-gate thin film transistor is small, and has the adva...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/77H01L23/367H01L27/32
CPCH01L27/1214H01L27/1259H01L23/367H10K59/12H01L27/1218H01L29/78633H01L27/1262H10K59/126H10K59/1213H10K50/87H10K50/84H10K50/805
Inventor 苏同上王东方王庆贺赵策周斌闫梁臣
Owner BOE TECH GRP CO LTD
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