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Method for manufacturing LTPS array substrate

A technology for array substrates and manufacturing methods, which is applied in the field of manufacturing low-temperature polysilicon array substrates, can solve the problems of complex process methods and many layers of films, and achieve the effects of process method optimization, process step reduction, and process time saving

Active Publication Date: 2019-01-15
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention provides a method for manufacturing an LTPS array substrate, which is used to solve the technical problems that the existing LTPS array substrate manufacturing technology requires many film layers and complicated manufacturing methods

Method used

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  • Method for manufacturing LTPS array substrate
  • Method for manufacturing LTPS array substrate
  • Method for manufacturing LTPS array substrate

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Embodiment 1

[0042] The present invention provides a manufacturing method of LTPS array substrate, the following combination Figure 2 to Figure 6 The manufacturing method is described in detail.

[0043] As shown in the figure, the manufacturing method includes the following steps:

[0044] Step S10, such as figure 2 As shown, a substrate 201 is provided, and the substrate 201 is usually made of a transparent glass substrate. A metal layer is deposited on the substrate 201, the metal layer is patterned by a photolithography process, and a metal light-shielding layer 202 is formed on the substrate 201. Generally, the material of the metal light-shielding layer 202 is molybdenum aluminum alloy, Chromium, molybdenum or other materials that have both light-shielding function and conductive properties.

[0045] In step S20, a buffer layer 203 is formed on the metal light-shielding layer 202. The material of the buffer layer 203 is silicon nitride, silicon oxide or a combination of both.

[0046] I...

Embodiment 2

[0051] In the first embodiment, the gate line trench is formed by trenching in the formed gate insulating and inter-insulating layer, and then the gate line is formed in the gate line trench to realize the gate line The design in the same layer as the source electrode and the drain electrode has a relatively simple structure and reduces the thickness of the film layer of the array substrate, but requires a process flow of forming the gate trench through exposure, etching, physical vapor deposition, etc.

[0052] Such as Figure 7 As shown, in this embodiment, the manufacturing step of the gate line trench is eliminated. After the steps S10 to S40 as described in the first embodiment, the polysilicon layer 701, the first gate insulating layer and the inter-insulating layer are formed. 702. The second gate insulating and inter-insulating layer 703 and other structures are directly coated with a layer of positive photoresist on the second gate insulating and inter-insulating layer 70...

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Abstract

The invention provides a method for manufacturing an LTPS array substrate. The LTPS array substrate comprises at least a metal light shielding layer, a buffer layer, a polysilicon layer, gate insulating and interlayer insulating layers, a gate line layer, and a source / drain electrode layer. The method adopts a chemical vapor deposition process to form the gate insulating and interlayer insulatinglayers, and forms gate line trenches on the gate insulating and interlayer insulating layers. The thickness of the LTPS array substrate film layer is reduced without changing the structures of the original semiconductor devices, the process steps are reduced, and the process time is saved, so that the production cost is reduced.

Description

Technical field [0001] The present invention relates to the field of liquid crystal display, and in particular to a method for manufacturing a low temperature poly-silicon (LTPS) array substrate. Background technique [0002] In display manufacturing, Low Temperature Poly-silicon (LTPS) technology is increasingly favored by manufacturers of mobile phones and flat screens due to its low product cost and high electronic mobility. [0003] In the traditional LTPS manufacturing process, the LTPS array substrate needs to undergo two chemical vapor deposition processes on the polysilicon layer in the manufacturing process to form the gate insulating layer (GI) and the interlayer dielectric (ILD), and The gate insulating layer and the inter insulating layer each have a two-layer structure. [0004] Such as figure 1 As shown, figure 1 It is a schematic diagram of the cross-sectional structure of the prior art LTPS array substrate. In the structure of the existing LTPS array substrate, the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1362G02F1/13H01L27/12
CPCH01L27/1259H01L27/1262G02F1/1303G02F1/1362H01L27/1288H01L29/78633H01L29/66757H01L21/2855H01L21/31116H01L21/32139
Inventor 陈辰
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD