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A kind of etching liquid and its preparation method, using method

An etching solution, polyethylene glycol technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve the problems affecting the texturing effect, etc. The effect of silicon wafer texturing

Active Publication Date: 2021-02-23
BYD CO LTD
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Problems solved by technology

[0004] However, the above-mentioned technical solutions fail to solve the bubble problem in the alkali texturing process, which indirectly affects the texturing effect

Method used

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  • A kind of etching liquid and its preparation method, using method
  • A kind of etching liquid and its preparation method, using method

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preparation example Construction

[0016] The present invention also provides a preparation method of the above etching solution, comprising adding hydroxide, isopropanol, 2-ethylhexyl sulfate sodium salt, polyvinylamine and polyethylene glycol into water and stirring until dissolved. Further, first dissolve the hydroxide in water, then add polyvinylamine, stir until dissolved, and finally add isopropanol, polyethylene glycol and 2-ethylhexyl sulfate sodium salt, control the temperature at 50-80°C, Stir fully and evenly to obtain the etching solution.

[0017] The present invention also provides a method for using the above etching solution. The silicon wafer is placed in the etching solution for etching treatment for 3-6 minutes at an etching temperature of 77-82° C., and then the etched silicon wafer is washed with water.

Embodiment 1-7

[0020] 1. Preparation of etching solution: dissolve hydroxide in water, then add polyvinylamine, stir until dissolved, and finally add isopropanol, polyethylene glycol and 2-ethylhexyl sulfate sodium salt, control the temperature at 65°C, Stir fully and evenly to obtain the etching solution. Etching solutions A1-A7 were obtained according to the composition ratio in Table 1. Among them, the hydroxide selected in A4 is sodium hydroxide (NaOH), the hydroxide selected in A1-A3 and A5-A7 is potassium hydroxide (KOH); the polyethylene glycol selected in A5 is polyethylene glycol 400, That is, the polyethylene glycol with an average molecular weight of 400; the polyethylene glycol selected by A1-A4 and A6 is polyethylene glycol 300; the polyethylene glycol selected by A7 is polyethylene glycol 200.

[0021] 2. Put a 15.6*15.6cm silicon wafer (there are lines marks on the surface of the silicon wafer) in the etching solution in step 1 for etching treatment, the time is 4 minutes, an...

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Abstract

The invention discloses an etching solution, which is an aqueous solution containing hydroxide, isopropanol, 2-ethylhexyl sulfate sodium salt, polyvinylamine and polyethylene glycol. The invention also provides a preparation method and a use method of the etching solution. The etching solution provided by the invention can be used for alkali texturing of polysilicon. The etching solution effectively eliminates line marks on the surface of silicon wafers while ensuring better texturing effect, and the defoaming effect is greatly improved.

Description

technical field [0001] The invention relates to the field of texturing of crystalline silicon solar cells, in particular to an etching solution, a preparation method and a use method thereof. Background technique [0002] Texturing is an important step in the preparation process of silicon solar cells, and it is also an important step in the application of black silicon technology to the preparation of silicon solar cells. The purpose is to remove the line marks left on the surface of the silicon wafer when the diamond wire cuts the silicon wafer, and to form a textured structure on the surface of the silicon wafer to reduce the surface reflectivity of the silicon wafer. The currently used texturing methods are usually alkali texturing for monocrystalline silicon and acid texturing for polycrystalline silicon. In general, the anisotropy of the alkaline solution is used to etch the pyramid-shaped suede on the surface of the single crystal silicon wafer. Because the crystal ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/306H01L31/18H01L31/0236
CPCH01L21/30608H01L31/02363H01L31/1804Y02P70/50
Inventor 韦家亮
Owner BYD CO LTD