Peak voltage lossless asynchronous absorption circuit and NPC three-level circuit
A technology of peak voltage and absorbing circuit, which is applied in the field of switching power supply to achieve the effect of flexible layout, diversification of product layout and prevention of damage
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Embodiment 1
[0047] Please refer to Figure 11 , Embodiment 1 of the present invention provides a peak voltage lossless asynchronous snubber circuit, including a second diode Ds2 connected in series with a switching device Q1, a bus capacitor Cbus, a third diode Ds3, and a snubbing capacitor Cs1, the switching device Q1 The first diode Ds1 is reversely connected between the common intersection point of the anode of the second diode Ds2 and the common intersection point of the absorption capacitor Cs1 and the cathode of the third diode Ds3, and the switching device Q1 is turned on or Disconnection is controlled by a pulse drive signal.
[0048] Please refer to Figure 11 , the switching device Q1 in Embodiment 1 of the present invention may be a field effect transistor. The specific connection relationship is as follows: the switching device Q1, the second diode Ds2, the bus capacitor Cbus, the third diode Ds3 and the absorption capacitor Cs1 are connected in series. The anode of the sec...
Embodiment 2
[0059] Please refer to Figure 14 to Figure 17 , Embodiment 2 of the present invention is improved on the basis of Embodiment 1, and its area is that at least one diode in the charging circuit and the unidirectional discharging circuit adopts a junction field effect transistor, a bipolar transistor, Insulated gate bipolar transistor, metal oxide semiconductor field effect transistor or V-groove field effect transistor replacement, when replacing at least one diode in the charging circuit, said junction field effect transistor, bipolar transistor, insulated gate bipolar transistor The conduction direction of the polar transistor, metal oxide semiconductor field effect transistor or V-groove field effect transistor is the same as the current direction of the charging circuit; when replacing at least one diode in the unidirectional discharge circuit, the junction field effect transistor The conduction direction of the bipolar transistor, the insulated gate bipolar transistor, the...
Embodiment 3
[0064] Please refer to Figure 18 and Figure 19 , the peak voltage lossless asynchronous absorbing circuit provided by the third embodiment of the present invention is improved on the basis of the first embodiment, the difference is that the second diode Ds2 or the third diode Ds3 in the unidirectional discharge circuit adopts Resistor or inductor replacement. Figure 18It is a solution to replace the second diode Ds2 in the unidirectional discharge circuit with the inductor L1. At this time, the inductor L1 has the functions of connection and energy storage, and is used to form a discharge current loop. Figure 19 It is a solution to replace the third diode Ds3 in the unidirectional discharge circuit with the resistor R1. At this time, the resistor R1 has a connection function and is used to form a discharge current loop.
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