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Polyether-ether-ketone laser-irradiation-based graphene preparing method

A polyetheretherketone and graphene technology, which is applied in the field of graphene preparation based on laser-induced polyetheretherketone, can solve the problems of substrate damage, graphene falling off, complicated preparation steps, etc., and achieves simple preparation process steps and low cost. , good biocompatibility

Inactive Publication Date: 2019-02-01
XINJIANG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The problem with the above method is that the preparation steps are complicated, the strong reducing agent and high temperature used to reduce graphene oxide will damage the substrate, and graphene is easy to fall off from the substrate
At the same time, since micro-supercapacitors are mostly used in wearable electronic devices, the biocompatibility of the above materials cannot meet the application requirements.

Method used

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  • Polyether-ether-ketone laser-irradiation-based graphene preparing method

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Experimental program
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Embodiment

[0020] Embodiment, a kind of method for preparing graphene based on laser-induced polyetheretherketone comprises the following steps:

[0021] 1) Put the cut PEEK substrate 4 into a beaker filled with deionized water to fully submerge it, put the beaker into an ultrasonic cleaner and ultrasonically clean it for 15 minutes to remove surface stains, and use a compressed air after cleaning Drying the polyetheretherketone base 4 with air;

[0022] 2) Place the PEEK substrate 4 on the three-dimensional workbench 5, adjust the Z-axis position of the three-dimensional workbench 5 to ensure that the surface of the test piece is in focus when lasers with different wavelengths are used to process the PEEK substrate 4 with different thicknesses Location;

[0023] 3) Using a laser direct writing processing system to induce polyether ether ketone to prepare graphene, specifically;

[0024] 3.1) Build a laser direct writing processing system: such as figure 1 As shown, the high-repetitio...

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Abstract

Disclosed is a polyether-ether-ketone laser-irradiation-based graphene preparing method. The polyether-ether-ketone laser-irradiation-based graphene preparing method comprises performing pretreatmenton a polyether-ether-ketone matrix, transferring the polyether-ether-ketone matrix to a three-dimensional worktable, performing induction on the polyether-ether-ketone matrix through a laser direct writing processing system to prepared graphene. The prepared graphene is rich in pores; the polyether-ether-ketone laser-irradiation-based graphene preparing method is simple in process, low in cost andcapable of easily high-precision scanning of complex two-dimensional graphics; by combining the excellent biocompatibility of polyether-ether-ketone, the graphene prepared through the polyether-ether-ketone laser-irradiation-based graphene preparing method has huge application potential in the field of wearable equipment.

Description

technical field [0001] The invention belongs to the field of laser processing and functional materials, in particular to a method for preparing graphene based on laser-induced polyether ether ketone. Background technique [0002] Graphene is a novel two-dimensional material with ultra-high specific surface area, charge mobility, electrical conductivity, and chemical stability. It is an ideal material for preparing micro-supercapacitors and sensor electrodes. At present, the use of graphene to prepare electrodes generally includes three steps. The first step is to prepare graphene oxide, which is easy to stack due to the strong van der Waals force and π-π bonds between graphene sheets, and has oxygen-containing functional groups. Graphene oxide can exist stably in aqueous solution, so strong oxidants are often used to chemically oxidize and strip natural graphite powder, and obtain graphene oxide solution under the physical assistance of ultrasound or centrifugation; the seco...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/184
CPCC01B2204/32C01P2002/01C01P2002/82C01P2004/03C01B32/184
Inventor 赵冬梅王恪典朱晨光万立中张文祥
Owner XINJIANG UNIVERSITY