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Polishing pad, manufacturing method of polishing pad, and polishing method

A manufacturing method and technology of grinding pads, which are applied in the fields of grinding tools, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems that have not yet been discovered, and achieve the effect of excellent grinding rate

Active Publication Date: 2021-06-22
DIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] As mentioned above, the industry has strongly demanded polishing pads with high polishing rates, low scratches, and high flatness required for high-precision polishing, and various attempts have been made, but the actual situation is that they have not yet been found.

Method used

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  • Polishing pad, manufacturing method of polishing pad, and polishing method
  • Polishing pad, manufacturing method of polishing pad, and polishing method
  • Polishing pad, manufacturing method of polishing pad, and polishing method

Examples

Experimental program
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Effect test

Embodiment

[0112] Hereinafter, the present invention will be specifically described by way of examples and comparative examples.

Synthetic example 1

[0113] (Synthesis Example 1: Synthesis of Urethane Prepolymer (A1))

[0114] 2,366 parts by mass of toluene diisocyanate (TDI-80) were charged into a 5-liter four-necked round-bottomed flask equipped with a nitrogen gas introduction pipe, a condenser for cooling, a thermometer, and a stirrer, and stirring was started. Next, 2,028 parts of polytetramethylene glycol (number average molecular weight: 1,000) was charged and mixed, and reacted at 80° C. for 3 hours under a nitrogen atmosphere. Next, 15 parts by mass of a polysiloxane compound (manufactured by Shin-Etsu Chemical Co., Ltd., "X-22-176DX"; single-end silicone diol, number average molecular weight: 3262) was charged and mixed, and heated at 80°C under a nitrogen stream. The reaction was carried out for 3 hours. Next, 591 parts by mass of diethylene glycol was reacted for 3 hours while paying attention to heat generation, and an isocyanate group-terminated urethane prepolymer (A1) having an NCO equivalent of 420 was obt...

Synthetic example 2

[0115] (Synthesis Example 2: Synthesis of Urethane Prepolymer (A2))

[0116] 2,366 parts by mass of toluene diisocyanate (TDI-80) were charged into a 5-liter four-necked round-bottomed flask equipped with a nitrogen gas introduction pipe, a condenser for cooling, a thermometer, and a stirrer, and stirring was started. Next, 2,044 parts by mass of polytetramethylene glycol (number average molecular weight: 1,000) was charged and mixed, and reacted at 80° C. for 3 hours under a nitrogen stream. Next, 590 parts by mass of diethylene glycol was reacted for 3 hours while paying attention to heat generation, and an isocyanate group-terminated urethane prepolymer (A2) having an NCO equivalent of 420 was obtained.

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Abstract

The present invention provides a polishing pad, which is characterized in that it is a foamed and cured product of a polyurethane resin composition containing a main agent (i) and a curing agent (ii), and the main agent (i) contains an amino group having an isocyanate group A formate prepolymer (A), the urethane prepolymer (A) having an isocyanate group is a polyol (a1) comprising a polysiloxane compound represented by general formula (1) and a polyisocyanate As for the reactant of (a2), the proportion of the polysiloxane compound in the raw material of the urethane prepolymer (A) is 1% by mass or less. The polishing pad has an excellent polishing rate, and can obtain a polished product with less scratches on the surface of the polished object and excellent smoothness.

Description

technical field [0001] The present invention relates to a polishing pad which can be particularly suitably used for polishing glass substrates, silicon wafers, semiconductor devices, and the like, a method for producing the polishing pad, and a polishing method. Background technique [0002] Glass substrates for liquid crystal displays (LCDs), glass substrates for hard disks (HDDs), glass disks for recording devices, optical lenses, silicon wafers, semiconductor devices, etc., require high surface flatness and in-plane uniformity. [0003] In particular, in the above-mentioned semiconductor devices, along with the rapid increase in the integration level of semiconductor circuits, miniaturization and multi-layer wiring for the purpose of high density are also advancing, and the processing surface is required to have a surface with a higher height. flatness. Moreover, in the glass substrate for liquid crystal displays mentioned above, the higher surface flatness of the proces...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/24C08G18/10C08G18/40C08G18/61C08J5/14H01L21/304C08G101/00
CPCB24B37/24C08G18/10C08G18/40C08G18/61H01L21/304
Inventor 小田善之柴雄一郎
Owner DIC CORP
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