Polishing layer of chemical mechanical polishing pad

Abstract

The invention relates to a polishing layer for a chemical mechanical polishing pad. The problems that scratches and the removing rate of an existing polishing layer are difficult to balance, and durability is poor are solved. According to the technical scheme, the polishing layer is manufactured through the reaction of polyhydric alcohol, polyamine and polyisocyanate. The polishing layer is characterized in that the polyhydric alcohol is a mixture of polytetramethylene ether polyhydric alcohol and polyester polyhydric alcohol with the following general formula (please see the general formula in the specifications), wherein a+b is smaller than or equal to 4; and the mass fraction of the polyester polyhydric alcohol to the polyhydric alcohol is x, wherein x is larger than or equal to 5% and smaller than or equal to 20%, in addition, the hardness and the energy storage modulus of the polishing layer meet the following formula under the temperature of 25 DEG C and the temperature of 40 DEG C, wherein E'40 and E'25 are the energy storage modulus of the polishing pad under the temperature of 40 DEG C and the temperature of 25 DEG C correspondingly, and H40 and H25 are the hardness of the polishing pad under the temperature of 40 DEG C and the temperature of 25 DEG C. The polishing layer has the beneficial effects that scratches are few, the removing rate is high, the grinding rate is high, and durability is good.

Description

technical field [0001] The invention relates to the polishing technical field of chemical mechanical planarization treatment, in particular to a polishing layer of a chemical mechanical polishing pad. Background technique [0002] In the manufacturing process of semiconductor devices, with the upgrading of process technology, the size between the wire and the gate is constantly shrinking, and the photolithography technology has higher and higher requirements for the flatness of the wafer surface. Since IBM successfully applied chemical mechanical polishing (CMP) technology to the production of 64Mb DRAM in 1991, CMP technology has developed rapidly and has been widely used in the planarization of semiconductor wafers, storage disks and high-precision optical materials. Chemical mechanical polishing, also known as chemical mechanical polishing, is a technology that combines chemical corrosion with mechanical removal, and is currently the only technology that can achieve globa...

AI Technical Summary

Problems solved by technology

Compared with polyether polyols, polyester polyols, on the one hand, have stronger crystallinity due to having more strong polar groups, thus have higher hardness and mechanical strength, and the prepared polishing pads have Higher removal rate and planarization ability; on the other hand, it is precisely because polyester polyols have a large number of strong polar ester groups that the prepared polishing pad shows better Poor hydrolysis resistance, which is manifested in the early stage of polishing, has high removal rate and planarization ability, but after a long period of corrosion by acid-base polishing solution, it is more prone to swelling and greatly changes its properties, and its hardness and mechanical properties are serious. Decrease, so it shows a more prominent lack of polishing ability in the later stage of polishing

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