Manufacturing method of gallium nitride HEMT

Abstract

The invention belongs to a manufacturing method, and particularly relates to a manufacturing method of a gallium nitride HEMT. The manufacturing method of the gallium nitride HEMT comprises the following steps that an electron moving layer and an electron supply layer AlXGa1-XN (x is greater than or 0 and less than and equal to 1) are arranged on a gallium nitride substrate; and a source, a drainand a gate are arranged on the electron supply layer in sequence to form transverse arrangement. A compound semiconductor device with the characteristic is disclosed. The manufacturing method has theremarkable effects that by applying the process disclosed by the invention, electrodes, comprising the source, the drain and the gate, are arranged on the AlXGa1-XN electron supply layer in sequence in transverse arrangement. Stable current-voltage characteristics can be obtained. Meanwhile, the voltage resistance value of the element can be improved. According to the method, on the premise that the ON voltage resistance of the GaN-system compound semiconductor device is improved, the I-V characteristic is also improved.

Description

technical field [0001] The invention belongs to a manufacturing method, and in particular relates to a manufacturing method of a gallium nitride HEMT, which can improve the stability of a high electron mobility transistor (HEMT) manufactured using a nitride compound semiconductor. Background technique [0002] Generally speaking, when we refer to semiconductors, the ones that leave the deepest impression on people are mostly large-scale integrated circuits (LSI) manufactured by micro-processing technology. Voltage and current. Therefore, a power supply capable of supplying the voltage and current is essential. In order to achieve "supply power in the desired form", semiconductors play an important role in it. In the sense of controlling electricity (energy), it is not surprising that the semiconductor components that play a central role are called power semiconductor modules or power semiconductors. [0003] In recent years, power semiconductor modules made of silicon car...

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Problems solved by technology

In this case, HEMT will also play a role, but the interface will be distorted due to the difference in lattice constant and thermal expansion coefficient between GaN layers. Under the pressure generated by the distortion, the density will be 1×10 9 cm -2 ~1×10 10 cm -2 threading dislocations, leading to the value increase of defects, and the AlGaN layer formed later will inherit the state of the underlying GaN layer

This will easily lead to the occurrence of leakage and the reduction of withstand voltage, and finally significantly reduce the performance of the finished original

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