A light-emitting diode epitaxial wafer and its preparation method

A technology for light-emitting diodes and epitaxial wafers, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of high stress release layer growth temperature limiting stress release effect, etc., to improve stress release effect, improve current expansion, and improve crystal quality. Effect
CN109346568BActive Publication Date: 2020-03-27HC SEMITEK ZHEJIANG CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
HC SEMITEK ZHEJIANG CO LTD
Publication Date
2020-03-27

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Abstract

The invention discloses a light emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, an N-type semiconductor layer, a stress release layer, an active layer and a P-type semiconductor layer, wherein the N-type semiconductor layer, the stress release layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate; the stress release layer comprises a plurality of composite structures which are stacked in sequence, wherein each composite structure comprises a first sub-layer, a second sub-layer, a third sub-layer and a fourth sub-layer which are stacked in sequence; the first sub-layer is made of non-doped indium gallium nitride, the second sub-layer is made of non-doped aluminum nitride, the third sub-layer is made of silicon nitride, and the fourth sub-layer is made of non-doped gallium nitride. According to the light-emitting diode epitaxial wafer, the photoelectric property of the LED is finally improved.
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Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique

[0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. LED has the advantages of high efficiency, long life, small size, low power consumption, etc., and can be used in indoor and outdoor white light lighting, screen display, backlight and other fields. In the development of the LED industry, gallium nitride (GaN)-based materials are typical representatives of Group V-III compound semiconductors, and improving the photoelectric performance of GaN-based LEDs has become the key to the semiconductor lighting industry.

[0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing GaN-based LED epitaxial wafer includes a substrate, an N-type semiconductor lay...

Claims

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