A light-emitting diode epitaxial wafer and its preparation method

A technology for light-emitting diodes and epitaxial wafers, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of high stress release layer growth temperature limiting stress release effect, etc., to improve stress release effect, improve current expansion, and improve crystal quality. Effect

Active Publication Date: 2020-03-27
HC SEMITEK ZHEJIANG CO LTD
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  • Abstract
  • Description
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Problems solved by technology

[0008] The embodiment of the present invention provides a light-emitting diode epitaxial wafer and its preparation method, which can solve the problem that the stress release effect is limited by the high growth temperature of the stress release layer in the prior art

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  • A light-emitting diode epitaxial wafer and its preparation method
  • A light-emitting diode epitaxial wafer and its preparation method
  • A light-emitting diode epitaxial wafer and its preparation method

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Embodiment Construction

[0029] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0030] An embodiment of the present invention provides a light emitting diode epitaxial wafer. figure 1 A schematic structural diagram of a light emitting diode epitaxial wafer provided by an embodiment of the present invention. see figure 1 , the light-emitting diode epitaxial wafer includes a substrate 10, an N-type semiconductor layer 20, a stress release layer 30, an active layer 40, and a P-type semiconductor layer 50, an N-type semiconductor layer 20, a stress release layer 30, an active layer 40, and a P-type semiconductor layer. Type semiconductor layers 50 are sequentially stacked on the substrate 10 .

[0031] figure 2 Schematic diagram of the structure of the stress release layer provided by the embodiment of the present...

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Abstract

The invention discloses a light emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, an N-type semiconductor layer, a stress release layer, an active layer and a P-type semiconductor layer, wherein the N-type semiconductor layer, the stress release layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate; the stress release layer comprises a plurality of composite structures which are stacked in sequence, wherein each composite structure comprises a first sub-layer, a second sub-layer, a third sub-layer and a fourth sub-layer which are stacked in sequence; the first sub-layer is made of non-doped indium gallium nitride, the second sub-layer is made of non-doped aluminum nitride, the third sub-layer is made of silicon nitride, and the fourth sub-layer is made of non-doped gallium nitride. According to the light-emitting diode epitaxial wafer, the photoelectric property of the LED is finally improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. LED has the advantages of high efficiency, long life, small size, low power consumption, etc., and can be used in indoor and outdoor white light lighting, screen display, backlight and other fields. In the development of the LED industry, gallium nitride (GaN)-based materials are typical representatives of Group V-III compound semiconductors, and improving the photoelectric performance of GaN-based LEDs has become the key to the semiconductor lighting industry. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing GaN-based LED epitaxial wafer includes a substrate, an N-type semiconductor lay...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/14H01L33/32
CPCH01L33/0075H01L33/145H01L33/32
Inventor 李昱桦乔楠蒋媛媛刘春杨胡加辉
Owner HC SEMITEK ZHEJIANG CO LTD
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