Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Photoresist removing solution and photoresist removing method

A photoresist and removal solution technology, which is applied in optics, photomechanical equipment, photosensitive material processing, etc., to achieve the effects of saving cost, improving removal effect, and improving process yield

Inactive Publication Date: 2019-02-26
WUXI HUAYING MICROELECTRONICS TECH CO LTD
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This type of chemicals are considered to be carcinogens, and they face the challenge of the health and safety discharge of people who come into contact with them.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoresist removing solution and photoresist removing method
  • Photoresist removing solution and photoresist removing method
  • Photoresist removing solution and photoresist removing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The present invention will be further described through several examples below. The following examples are just examples of the present invention, and the content of the present invention is not limited to the following examples. In the following examples, the chemical liquid used is electronic grade, wherein the mass concentration of ammonia water is 25-28%. For the convenience of calculation, in the following examples, the mass concentration of ammonia water is calculated as 28%. In the following examples, the preparation method of the test wafer used to test the removal effect is as follows: the positive photoresist (model AZ701 model AZ701) that is currently in use is coated with a thickness of 1 micron on the entire surface of the wafer using a rotating or sliding device. , AZ Electronics Materials Group (AZ Electronics Materials)), use a hot plate or an oven to perform pre-baking at a temperature of about 150°C, and then expose different wafers using photomasks wit...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a photoresist removing solution and a method for photoresist removal via the photoresist removing solution. The photoresist removing solution comprises ammonia and an organic solvent, wherein the ammonia is ammonia gas, liquid ammonia or a mixture of ammonia and water, and the organic solvent is an organic solvent having at least one electron-withdrawing functional group. According to the removing method, the photoresist removing solution may be generated through on-line gas-liquid mixing and is directly applied onto a wafer surface with a photoresist for photoresist removal and wafer surface cleaning; in virtue of the organic solvent with low / no corrosion to a substrate material / substrate metal and the properties of ammonia, wet-process photoresist removal is improved in the removal effect on photoresists and polymers, and corrosion to wafer substrates is reduced; and process yield is improved, and an effective solution is provided for the development of smaller process feature sizes.

Description

technical field [0001] The invention relates to a photoresist remover, in particular to a remover capable of reducing substrate and structure corrosion and quickly removing photoresist and a method for removing glue by using the remover. Background technique [0002] Photolithography is an important step in the semiconductor manufacturing process. This step uses exposure and development to draw patterns on the photoresist layer, and then transfers the patterns on the photomask to the semiconductor wafer through the etching process. After the above steps are completed, processes such as selective etching or ion implantation can be performed on the wafer, and the undissolved photoresist will protect the covered wafer surface from being changed during these processes. After the above process is completed, the photoresist needs to be removed and the surface of the wafer needs to be cleaned before other steps of semiconductor device manufacturing can be performed. Usually, many ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/42
CPCG03F7/425
Inventor 温子瑛孙富成王致凯
Owner WUXI HUAYING MICROELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com