QLED device based on combination electrode and preparation method thereof
A composite electrode and device technology, applied in the field of quantum dots, can solve the problems of high leakage current, affecting QLED luminous efficiency and service life, etc.
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[0044] Furthermore, the present invention also provides a method for preparing a QLED device based on a composite electrode, such as Figure 4 As shown, wherein, when the composite electrode is used as the bottom electrode, the steps include:
[0045] S1. Provide a substrate, and deposit a graphene layer on the substrate;
[0046] S2, depositing an organic layer on the surface of the graphene layer;
[0047] S3. Depositing a metal oxide layer on the surface of the organic layer;
[0048] S4. A quantum dot luminescent layer on the surface of the metal oxide layer;
[0049] S5. Depositing a first electrode on the surface of the quantum dot light-emitting layer.
[0050] Specifically, the present invention firstly places the glass substrate (substrate) in acetone, lotion, deionized water and isopropanol for ultrasonic cleaning, each cleaning time is 10-20min, and the cleaned glass substrate is placed Dry in a clean oven for later use;
[0051] After the glass substrate is dr...
Embodiment 1
[0064] 1. Place the glass substrate in acetone, lotion, deionized water and isopropanol in sequence for ultrasonic cleaning, each cleaning time is 10 minutes, and place the cleaned glass substrate in a clean oven to dry for later use;
[0065] 2. After the glass substrate is dried, a graphene layer is deposited on the glass substrate by a solution method, and the glass substrate is placed on a heating table at 80° C. for 15 minutes. The thickness of the graphene layer is 60nm;
[0066] 3. After the glass substrate is cooled, a layer of TFB is deposited on the surface of the graphene layer by evaporation, and the glass substrate is placed on a heating platform at 100° C. for 10 minutes. The thickness of the TFB layer is 30nm;
[0067] 4. After the glass substrate is cooled, deposit a V on the surface of the TFB layer by evaporation 2 o 5 layer to make a composite electrode; the V 2 o 5 The thickness of the layer is 30 nm;
[0068] 5, followed by the V 2 o 5 A quantum do...
Embodiment 2
[0071] 1. Place the glass substrate in acetone, lotion, deionized water and isopropanol in sequence for ultrasonic cleaning. Each cleaning time is 15 minutes. Place the cleaned glass substrate in a clean oven to dry for later use;
[0072] 2. After the glass substrate is dried, a layer of 100nm metal aluminum is thermally evaporated on the glass substrate through a mask plate as the first electrode;
[0073] 3. Depositing a quantum dot luminescent layer on the surface of the first electrode, the thickness of the quantum dot luminescent layer is 35nm;
[0074] 4. Deposit a MoO on the surface of the quantum dot luminescent layer by evaporation 3 layer, the MoO 3 The thickness of the layer is 15 nm;
[0075] 5. On the MoO by evaporation method 3 A PVK layer was deposited on the surface of the layer, and the glass substrate was placed on a heating platform at 120°C for 10 minutes, and the thickness of the PVK layer was 20nm;
[0076] 6. After the glass substrate is cooled, a g...
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